2SK1842

Silicon Junction FETs (Small Signal) 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.25 s Features q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9 –0.05 1 1.9±0.2 +0.2 0.95 3 0.4 –0.05 +0.1 2 Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature VGSO ID IG PD Tj Tstg −40 1 10 150 150 −55 to +150 V mA mA mW °C °C 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): EB s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Symbol IDSS IGSS VGDS VGSC | Yfs | Coss * Conditions VDS = 10V, VGS = 0 VGS = −20V, VDS = 0 IG = −10µA, VDS = 0 VDS = 10V, ID = 1µA VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz min 30 −40 typ 0 to 0.1 VGDO −40 V 0.1 to 0.3 0.4±0.2 0.8 Parameter Symbol Ratings Unit +0.2 1.1 –0.1 max 200 − 0.5 0.16 –0.06 +0.1 s Absolute Maximum Ratings (Ta = 25°C) 1.45 Unit µA nA V −1.3 0.05 1 0.4 0.4 −3 V mS pF pF pF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA) O 30 to 75 EBP P 50 to 100 EBQ Q 70 to 130 EBR R 100 to 200 EBS Marking Symbol 1 Silicon Junction FETs (Small Signal) PD  Ta 240 240 Ta=25˚C 200 200 200 VGS=0.4V 2SK1842 ID  VDS 240 VDS=10V ID  VGS Allowable power dissipation PD (mW) Drain current ID (µA) 160 160 Drain current ID (µA) 160 120 120 0.2V 0V 120 80 80 – 0.2V – 0.4V 80 40 0 – 0.6V 40 Ta=75˚C –25˚C – 0.8 – 0.4 25˚C 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 –1.2 0 0.4 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs |  VGS 1.2 | Yfs |  ID Forward transfer admittance |Yfs| (mS) VDS=10V f=1kHz Ta=25˚C Ciss, Coss, Crss  VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 1.2 VDS=10V Ta=25˚C VGS=0V Ta=25˚C f=1MHz 240 Forward transfer admittance |Yfs| (mS) 1.0 200 1.0 0.8 160 IDSS=100µA 0.8 Ciss 0.6 IDSS=100µA 120 0.6 0.4 80 0.4 Crss Coss 0.2 40 0.2 0 –1.2 0 – 0.8 – 0.4 0 0.4 0 40 80 120 160 200 240 0 0 2 4 6 8 10 12 Gate to source voltage VGS (V) Drain current ID (µA) Drain to source voltage VDS (V) 2