2SK2123

Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 8.0±0.2 Solder Dip 13.7–0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.3 3.0±0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 123 2.6±0.1 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±5 ±15 100 50 2 150 −55 to +150 Unit V V A A mJ W °C °C 7 1: Gate 2: Drain 3: Source TO-220E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 8mH, IL = 5A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) VGS = 10V, ID = 3A VDD = 150V, RL = 50Ω Conditions VDS = 360V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 700 VDS = 20V, VGS = 0, f = 1MHz 100 40 25 45 35 80 2.5 2 450 2 1 2.5 −1.2 5 1.3 min typ max 0.1 ±1 Unit mA µA V V Ω S V pF pF pF ns ns ns ns °C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case 1 Power F-MOS FETs Area of safe operation (ASO) 100 30 IDP 10 ID 3 1ms 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 10ms DC 60 2SK2123 PD  Ta Avalanche energy capacity EAS (mJ) Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink (PD=2W) 120 VDD=50V ID=5A 100 EAS  Tj Non repetitive pulse TC=25˚C t=100µs 50 Drain current ID (A) 40 (1) 30 80 60 20 40 10 (2) 0 0 20 40 60 80 100 120 140 160 20 0 25 50 75 100 125 150 175 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) Junction temperature Tj (˚C) ID  VDS 8 TC=25˚C 7 6 5 4 3 2 5V 1 0 0 10 20 30 40 50 60 50W 4.5V 0 0 2 5.5V VGS=15V 10V 6.5V 6V 8 10 ID  VGS 6 VDS=25V Vth  TC VDS=25V ID=1mA 5 Gate threshold voltage Vth (V) 12 Drain current ID (A) Drain current ID (A) 6 TC=0˚C 25˚C 150˚C 100˚C 4 3 4 2 2 1 0 4 6 8 10 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (˚C) VDS  VGS Drain to source ON-resistance RDS(on) (Ω) 40 TC=25˚C 6 RDS(on)  ID 3.0 | Yfs |  ID Forward transfer admittance |Yfs| (S) VGS=10V VDS=25V TC=25˚C 2.5 Drain to source voltage VDS (V) 35 30 25 20 15 10 5A 5 2.5A 0 0 5 10 15 20 25 30 5 4 2.0 10A 3 TC=150˚C 2 100˚C 25˚C 1 0˚C 0 0 2 4 6 8 10 1.5 1.0 0.5 0 0 1 2 3 4 5 Gate to source voltage VGS (V) Drain current ID (A) Drain current ID (A) 2 Power F-MOS FETs Ciss, Coss, Crss  VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25˚C 2SK2123 VDS, VGS  Qg 400 20 120 ID=5A TC=25˚C VDS td(on), tr, tf, td(off)  ID VDD=150V VGS=10V TC=25˚C Drain to source voltage VDS (V) Gate to source voltage VGS (V) 3000 1000 350 300 250 200 150 100 50 0 0 VDS=90V 225V 330V Switching time td(on),tr,tf,td(off) (ns) 100 15 Ciss 300 100 30 10 3 1 0 50 100 150 200 250 Coss Crss 80 td(off) 10 60 tr 40 tf td(on) 20 VGS 5 10 20 30 40 50 0 60 0 0 1 2 3 4 5 Drain to source voltage VDS (V) Gate charge amount Qg (nC) Drain current ID (A) Rth(t)  t 1000 Notes: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A(2W) and without heat sink (2) PT=10V × 1.0A(10W) and with a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) 100 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3