2SK2126

Power F-MOS FETs 2SK2126 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 40ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 8.0±0.2 Solder Dip 13.7–0.2 q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.3 3.0±0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±5 ±10 100 50 2 150 −55 to +150 Unit V V A A mJ W °C °C 7 123 1: Gate 2: Drain 3: Source TO-220E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 8mH, IL = 5A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) VGS = 10V, ID = 3A VDD = 150V, RL = 50Ω Conditions VDS = 400V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 700 VDS = 20V, VGS = 0, f = 1MHz 100 35 20 40 40 80 2.5 2 500 2 1.35 3.5 −1.6 5 1.7 min typ max 0.1 ±1 Unit mA µA V V Ω S V pF pF pF ns ns ns ns °C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case 1 Power F-MOS FETs Area of safe operation (ASO) 100 60 2SK2126 PD  Ta Avalanche energy capacity EAS (mJ) Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink (PD=2W) 120 VDD=50V ID=5A 100 EAS  Tj Non repetitive pulse TC=25˚C IDP ID t=100µs 50 Drain current ID (A) 10 40 (1) 30 80 1ms 1 10ms DC 60 20 40 0.1 10 (2) 20 0.01 1 10 100 1000 0 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) Junction temperature Tj (˚C) ID  VDS 8 VGS=15V 7 6 5 4 3 2 5.5V 1 0 0 10 20 30 40 50 60 50W 5V 0 0 2 10V 7V 6.5V 5 6 ID  VGS 6 VDS=25V TC=0˚C 25˚C 150˚C 100˚C Vth  TC VDS=25V ID=1mA 5 4 Gate threshold voltage Vth (V) 10 12 Drain current ID (A) Drain current ID (A) 4 3 3 6V 2 2 1 1 0 4 6 8 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (˚C) VDS  VGS Drain to source ON-resistance RDS(on) (Ω) 40 TC=25˚C 6 RDS(on)  ID 6 | Yfs |  ID Forward transfer admittance |Yfs| (S) VGS=10V VDS=25V TC=25˚C 5 Drain to source voltage VDS (V) 5 30 ID=10A 4 4 20 3 TC=150˚C 100˚C 3 2 25˚C 1 0˚C 2 10 5A 2.5A 0 0 5 10 15 20 1.25A 25 30 1 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Gate to source voltage VGS (V) Drain current ID (A) Drain current ID (A) 2 Power F-MOS FETs Ciss, Coss, Crss  VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25˚C 2SK2126 VDS, VGS  Qg 300 ID=5A 24 VDS 240 td(on), tr, tf, td(off)  ID VDD=200V VGS=10V TC=25˚C 250 20 Switching time td(on),tr,tf,td(off) (ns) Drain to source voltage VDS (V) Gate to source voltage VGS (V) 200 1000 Ciss 200 16 160 100 Coss Crss 10 150 12 120 100 VGS 50 8 80 td(off) tf 4 40 tr td(on) 1 0 50 100 150 200 0 0 10 20 30 0 40 0 0 1 2 3 4 5 Drain to source voltage VDS (V) Gate charge amount Qg (nC) Drain current ID (A) Rth(t)  t 1000 Notes: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A(2W) and without heat sink (2) PT=10V × 1.0A(10W) and with a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) 100 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3