2SK2375

Power F-MOS FETs 2SK2375 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 15.5±0.5 4.5 φ3.2±0.1 10.0 3.0±0.3 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 5˚ 26.5±0.5 5˚ 23.4 22.0±0.5 2.0 1.2 5˚ 18.6±0.5 5˚ 5˚ 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 ±30 ±8 ±16 60 100 3 150 −55 to +150 Unit V V 5.45±0.3 3.3±0.3 0.7±0.1 5.45±0.3 5.5±0.3 5˚ 1 2 3 A A mJ W °C °C 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 1.9mH, IL = 8A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 200V, ID = 4A VGS = 10V, RL = 50Ω Conditions VDS = 720V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A IDR = 8A, VGS = 0 1800 VDS = 20V, VGS = 0, f = 1MHz 200 90 30 70 80 250 1.25 41.67 3 900 2 1.3 5.5 −1.6 5 1.7 min typ max 100 ±1 Unit µA µA V V Ω S V pF pF pF ns ns ns ns °C/W °C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 2.0 1 Power F-MOS FETs Area of safe operation (ASO) 100 120 2SK2375 PD  Ta Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink (PD=3W) 7 VDS=25V 6 TC=150˚C ID  VGS Non repetitive pulse TC=25˚C 30 IDP 10 ID 100 Drain current ID (A) Drain current ID (A) t=100µs 5 80 (1) 60 4 3 1ms 10ms 100ms 3 1 40 2 150˚C 100˚C 25˚C 0˚C 0 1 2 3 4 5 6 7 8 0.3 DC 20 (2) 1 0.1 1 3 10 30 100 300 1000 0 0 20 40 60 80 100 120 140 160 0 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) Gate to source voltage VGS (V) Vth  TC 6 70 VDS=25V ID=1mA 5 VDS  VGS Drain to source ON-resistance RDS(on) (Ω) 5 TC=25˚C RDS(on)  ID VGS=10V Drain to source voltage VDS (V) Gate threshold voltage Vth (V) 60 4 TC=150˚C 3 100˚C 2 25˚C 1 0˚C 50 ID=16A 4 40 3 30 2 20 8A 10 4A 2A 1 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25 30 0 0 1 2 3 4 5 6 7 8 Case temperature TC (˚C) Gate to source voltage VGS (V) Drain current ID (A) | Yfs |  ID Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 6 10000 Ciss, Coss, Crss  VDS 600 f=1MHz TC=25˚C ton, tf, td(off)  ID VDD=200V VGS=10V TC=25˚C Forward transfer admittance |Yfs| (S) VDS=25V 5 25˚C 100˚C Switching time ton,tf,td(off) (ns) TC=0˚C 3000 Ciss 500 4 1000 400 3 150˚C 2 300 300 td(off) 200 ton 100 tf 100 Coss Crss 1 30 0 0 1 2 3 4 5 6 7 8 10 0 40 80 120 160 200 0 0 2 4 6 8 10 12 Drain current ID (A) Drain to source voltage VDS (V) Drain current ID (A) 2