2SK2571

Power F-MOS FETs 2SK2571 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown 4.5 unit: mm 15.5±0.5 φ3.2±0.1 10.0 3.0±0.3 5˚ 26.5±0.5 5˚ 23.4 22.0±0.5 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 2.0 1.2 5˚ 18.6±0.5 5˚ 5˚ 4.0 2.0±0.2 1.1±0.1 2.0 0.7±0.1 3.3±0.3 0.7±0.1 Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±13 ±26 200 100 3 150 −55 to +150 Unit V V A A mJ W °C °C 5˚ 5.5±0.3 s Absolute Maximum Ratings (TC = 25°C) 5.45±0.3 5.45±0.3 1 2 3 1: Gate 2: Drain 3: Source TOP-3E Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 2.4mH, IL = 13A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss ton tf td(off) Rth(ch-c) Rth(ch-a) Conditions VDS = 360V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 7A VDS = 25V, ID = 7A IDR = 13A, VGS = 0 1700 VDS = 20V, VGS = 0, f = 1MHz 300 120 VDD = 150V, ID = 7A VGS = 10V, RL = 21.4Ω 110 90 220 1.25 41.67 5 450 2 0.34 8 −2 5 0.45 min typ max 100 ±1 Unit µA µA V V Ω S V pF pF pF ns ns ns °C/W °C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 2.0 1 Power F-MOS FETs Area of safe operation (ASO) 102 120 2SK2571 P D  Ta Allowable power dissipation PD (W) (1) TC=Ta (2) Without heat sink PD=3.0W 102 IAS  L-load TC=25˚C Non repetitive pulse TC=25˚C IDP Drain current ID (A) ID 10 DC t=1ms 80 (1) 60 Avalanche current IAS (A) 100 10 E=200mJ 100ms 1 10ms 40 1 20 (2) 10–1 10–1 1 10 102 103 0 0 20 40 60 80 100 120 140 160 10–1 10–1 1 10 102 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) L-load (mH) ID  VGS 30 VDS=25V TC=25˚C 25 6 Vth  TC Drain to source ON-resistance RDS(on) (Ω) 1.2 VDS=25V ID=1mA 5 RDS(on)  ID TC=25˚C 1.0 20 Gate threshold voltage Vth (V) Drain current ID (A) 4 0.8 15 3 0.6 10 2 0.4 VGS=10V 15V 5 1 0.2 0 0 2 4 6 8 10 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25 Gate to source voltage VGS (V) Case temperature TC (˚C) Drain current ID (A) VDS  VGS 35 20 | Yfs |  ID Forward transfer admittance |Yfs| (S) TC=25˚C VDS=25V TC=25˚C Ciss, Coss, Crss  VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25˚C Drain to source voltage VDS (V) 30 3000 Ciss 25 15 1000 20 ID=26A 10 300 15 100 Coss Crss 10 13A 6.5A 3.25A 0 0 5 10 15 20 25 30 5 5 30 0 0 5 10 15 20 25 10 0 50 100 150 200 250 Gate to source voltage VGS (V) Drain current ID (A) Drain to source voltage VDS (V) 2 Power F-MOS FETs ton, tf, td(off)  ID 300 VDD=150 VGS=10V TC=25˚C td(off) 200 300 ID=13A 2SK2571 VDS, VGS  Qg 12 Drain to source voltage VDS (V) 250 250 VDS 200 VGS 150 10 8 150 ton 100 tf 50 6 100 4 50 2 0 0 2 4 6 8 10 20 0 0 20 40 60 80 0 100 Drain current ID (A) Gate charge amount Qg (nC) Rth(t)  t 102 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 10 (1) (2) Thermal resistance Rth(t) (˚C/W) 1 10–1 10–2 10–3 10–2 10–1 1 10 102 103 Time t (s) Gate to source voltage VGS (V) Switching time ton,tf,td(off) (ns) 3