2SK2593

Silicon Junction FETs (Small Signal) 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.4 unit: mm 1.6±0.15 0.8±0.1 0.4 q Low noies, high gain q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.6±0.1 1.0±0.1 0.5 1 0.5 3 2 0.45±0.1 0.3 0.75±0.15 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 −55 −55 ±30 10 125 125 −55 to +125 Unit V V V mA mA mW °C °C 1: Source 2: Drain 3: Gate EIAJ: SC-75 SS-Mini Type Package (3-pin) Marking Symbol (Example): 2B s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Symbol IDSS* IGSS VGDS VGSC | Yfs | Conditions VDS = 10V, VGS = 0 VGS = −30V, VDS = 0 IG = −100µA, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 5mA, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz 2.5 7.5 6.5 1.9 2.5 55 80 −5 min 1 typ max 20 10 Unit mA nA V V mS pF pF dB Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NF * IDSS rank classification Runk IDSS (mA) P 1 to 3 2BP Q 2 to 6.5 2BQ R 5 to 12 2BR S 10 to 20 2BS Marking Symbol 0 to 0.1 0.2±0.1 0.15–0.05 +0.1 0.2–0.05 +0.1 s Features 1 Silicon Junction FETs (Small Signal) PD  Ta 150 5 Ta=25˚C 125 2SK2593 ID  VDS 10 Ta=25˚C ID  VDS Allowable power dissipation PD (mW) 4 8 Drain current ID (mA) 100 Drain current ID (mA) VGS=0V 3 VGS=0 – 0.2V 6 – 0.2V 75 – 0.4V 4 – 0.6V 2 – 0.8V – 1.0V 2 – 0.4V – 0.6V 50 25 1 – 0.8V – 1.0V – 1.2V 0 6 0 2 4 6 8 10 12 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Drain to source voltage VDS (V) ID  VGS 16 12 | Yfs |  VGS 12 VDS=10V Ta=25˚C 10 | Yfs |  ID Forward transfer admittance |Yfs| (mS) VDS=10V Ta=25˚C 10 14 Drain current ID (mA) 12 10 8 6 4 75˚C 2 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2 Forward transfer admittance |Yfs| (mS) VDS=10V Ta=25˚C 8 8 IDSS=7.5mA Ta=–25˚C 25˚C 6 6 4 4 2 2 0 –2.0 0 –1.6 –1.2 – 0.8 – 0.4 0 0 2 4 6 8 10 Gate to source voltage VGS (V) Gate to source voltage VGS (V) Drain current ID (mA) Ciss  VDS Output capacitance (Common source) Coss (pF) Input capacitance (Common source) Ciss (pF) 16 VGS=0 Ta=25˚C 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 8 Coss  VDS VGS=0 Ta=25˚C 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Crss  VDS Reverse transfer capacitance (Common source) Crss (pF) 8 VGS=0 Ta=25˚C 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V) Drain to source voltage VDS (V) Drain to source voltage VDS (V) 2