2SK3030

Power F-MOS FETs 2SK3030 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.3±0.1 1.8±0.1 unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 s Applications 2.5±0.1 0.8max 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 100 ±20 ±8 ±16 3.2 10 1 150 −55 to +150 Unit V V A A mJ 1 2 0.75±0.1 2.3±0.1 4.6±0.1 3 1: Gate 2: Drain 3: Source U Type Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C Internal Connection W °C °C S G D L = 0.1mH, IL = 8A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 30V, ID = 4A VGS = 10V, RL = 7.5Ω Conditions VDS = 80V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 4A VGS = 4V, ID = 4A VDS = 10V, ID = 4A IDR = 8A, VGS = 0 290 VDS = 10V, VGS = 0, f = 1MHz 110 30 15 40 190 860 12.5 125 3 100 1 150 170 6 −1.5 2.5 230 260 min typ max 10 ±10 Unit µA µA V V mΩ mΩ S V pF pF pF ns ns ns ns °C/W °C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 1.0±0.2 1