2SK3036

Power F-MOS FETs 2SK3036 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown q Low-voltage drive q High electrostatic breakdown voltage unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 2.3±0.1 0.5±0.1 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 7.3±0.1 1.8±0.1 2.5±0.1 0.8max 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 0.75±0.1 2.3±0.1 4.6±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 150 ±20 ±6 ±12 3.6 20 1 150 −55 to +150 Unit V V A A mJ W °C °C S 1 2 3 1: Gate 2: Drain 3: Source U Type Package Internal Connection D G Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 0.1mH, IL = 6A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on)1 RDS(on)2 | Yfs | VDSF Coss ton td(off) tf Conditions VDS = 120V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 3A VGS = 4V, ID = 3A VDS = 10V, ID = 3A IDR = 6A, VGS = 0 300 VDS = 10V, VGS = 0, f = 1MHz 76 40 VDD = 100V, ID = 3A VGS = 10V, RL = 33Ω 80 920 250 150 1 300 340 4.2 −1.6 2.5 450 510 min typ max 10 ±10 Unit µA µA V V mΩ mΩ S V pF pF pF ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time (delay time) Fall time 1.0±0.2 1