2SK3046

Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 500 ±30 ±7 ±14 130 40 2 150 −55 to +150 Unit V V A A mJ W °C °C 1 2 2.54±0.3 3 5.08±0.5 1: Gate 2: Drain 3: Source TO-220D Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 5.4mH, IL = 7A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VGS = 10V, ID = 5A VDD = 150V, RL = 30Ω Conditions VDS = 400V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A IDR = 7A, VGS = 0 1200 VDS = 20V, VGS = 0, f = 1MHz 160 70 30 70 140 60 3 500 2 0.7 5 −1.6 5 1 min typ max 0.1 ±1 Unit mA µA V V Ω S V pF pF pF ns ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time 1 Power F-MOS FETs Area of safe operation (ASO) 100 30 10 3 1 0.3 10ms 0.1 100ms 0.03 0.01 1 3 10 30 100 300 1000 60 2SK3046 PD  Ta 100 EAS  Tj Avalanche energy capacity EAS (mJ) Allowable power dissipation PD (W) Non repetitive pulse TC=25˚C t=10µs (1) TC=Ta (2) Without heat sink 50 80 Drain current ID (A) 40 (1) 30 DC 100µs 1ms 60 40 20 10 (2) 0 0 20 40 60 80 100 120 140 160 20 0 25 50 75 100 125 150 175 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) Junction temperature Tj (˚C) ID  VDS 16 TC=25˚C 14 VGS=15V 10V 8 12 10 8 6 4 5V 2 0 0 10 20 30 40 50W 4V 50 60 0 0 2 5.5V 7V 6V 10 ID  VGS 6 VDS=25V TC=0˚C 25˚C 150˚C 100˚C Vth  TC VDS=25V ID=1mA 5 Gate threshold voltage Vth (V) 10 12 Drain current ID (A) Drain current ID (A) 4 6 3 4 2 2 1 0 4 6 8 0 25 50 75 100 125 150 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Case temperature TC (˚C) VDS  VGS Drain to source ON-resistance RDS(on) (Ω) 40 TC=25˚C 2.4 RDS(on)  ID 6 | Yfs |  ID Forward transfer admittance |Yfs| (S) VGS=10V VDS=25V TC=25˚C 5 Drain to source voltage VDS (V) 2.0 30 1.6 TC=150˚C 1.2 100˚C 4 20 3 ID=14A 10 1.75A 0.8 25˚C 0˚C 2 7A 3.5A 5 10 15 20 25 30 0.4 1 0 0 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Gate to source voltage VGS (V) Drain current ID (A) Drain current ID (A) 2 Power F-MOS FETs Ciss, Coss, Crss  VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 f=1MHz TC=25˚C 2SK3046 VDS, VGS  Qg 400 16 14 12 VDS 10 8 6 4 2 0 60 300 ID=8A TC=25˚C td(on), tr, tf, td(off)  ID VDD=200V VGS=10V TC=25˚C Drain to source voltage VDS (V) Gate to source voltage VGS (V) 350 300 250 200 150 100 50 0 0 10 20 30 40 Switching time td(on),tr,tf,td(off) (ns) Ciss 250 1000 200 100 Coss Crss 150 td(on) 100 tf tr 50 td(off) VGS 10 1 0 50 100 150 200 0 0 2 4 6 8 10 50 Drain to source voltage VDS (V) Gate charge amount Qg (nC) Drain current ID (A) Rth(t)  t 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3