2SK3048

Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 ±30 ±3 ±6 22.5 35 2 150 −55 to +150 Unit V V A A mJ W °C °C 1 2 2.54±0.3 3 5.08±0.5 1: Gate 2: Drain 3: Source TO-220D Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 5mH, IL = 3A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VDD = 200V, ID = 2A VGS = 10V, RL = 100Ω Conditions VDS = 480V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 2A VDS = 25V, ID = 2A IDR = 3A, VGS = 0 750 VDS = 20V, VGS = 0, f = 1MHz 80 25 15 25 90 40 1.5 600 2 1.7 2.5 −1.5 5 2.5 min typ max 100 ±1 Unit µA µA V V Ω S V pF pF pF ns ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time 1 Power F-MOS FETs Area of safe operation (ASO) 100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC 10ms 100ms 60 2SK3048 P D  Ta 10 (1) TC=Ta (2) Without heat sink IAS  L-load TC=25˚C Allowable power dissipation PD (W) Non repetitive pulse TC=25˚C Avalanche current IAS (A) 50 Drain current ID (A) t=10µs 100µs 1ms 3 22.5mJ 40 1 30 (1) 20 0.3 10 (2) 0 0 20 40 60 80 100 120 140 160 0.1 0.1 0.3 1 3 10 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) L-load (mH) ID  VDS 6 6 ID  VGS 35 VDS=25V TC=25˚C 5 VDS  VGS TC=25˚C VGS=10V Drain to source voltage VDS (V) Drain current ID (A) 6V 7V 5 30 Drain current ID (A) 25 4 5.5V 4 20 3 5V 2 40W 1 4.5V 4V 0 0 5 10 15 20 25 3 15 2 10 ID=3A 2A 1A 0 5 10 15 20 25 30 1 TC=125˚C 85˚C 0 0 2 4 6 8 10 12 0˚C 25˚C 5 0 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Gate to source voltage VGS (V) RDS(on)  ID Drain to source ON-resistance RDS(on) (Ω) 6 7 | Yfs |  ID Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) Ciss, Coss, Crss  VDS VDS=25V 1000 f=1MHz TC=25˚C Ciss 300 Forward transfer admittance |Yfs| (S) VGS=10V 5 TC=125˚C 6 5 TC=0˚C 25˚C 85˚C 125˚C 4 85˚C 3 25˚C 4 100 Coss 30 Crss 10 3 2 2 0˚C 1 1 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 0 20 40 60 80 100 Drain current ID (A) Drain current ID (A) Drain to source voltage VDS (V) 2 Power F-MOS FETs VDS, VGS  Qg 400 14 150 2SK3048 td(on), tr, tf, td(off)  ID VDD=200V VGS=10V TC=25˚C 300 12 Switching time td(on),tr,tf,td(off) (ns) Drain to source voltage VDS (V) Gate to source voltage VGS (V) 125 250 VDS VDS=100V 200V VGS 10 100 td(off) 75 200 8 150 6 50 100 4 tf tr 50 2 25 td(on) 0 0 1 2 3 4 5 0 0 5 10 15 20 25 0 Gate charge amount Qg (nC) Drain current ID (A) Rth(t)  t 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3