2SK3049

Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0.1 13.7±0.2 4.2±0.2 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 0.55±0.15 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 ±30 ±5 ±10 62.5 40 2 150 −55 to +150 Unit V V A A mJ W °C °C 1 2 2.54±0.3 3 5.08±0.5 1: Gate 2: Drain 3: Source TO-220D Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25°C Ta = 25°C L = 5mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VDD = 200V, ID = 3A VGS = 10V, RL = 66.6Ω Conditions VDS = 480V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 1200 VDS = 20V, VGS = 0, f = 1MHz 140 40 20 30 150 50 1.7 600 2 0.85 3.4 −1.6 5 1.5 min typ max 100 ±1 Unit µA µA V V Ω S V pF pF pF ns ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time 1 Power F-MOS FETs Area of safe operation (ASO) 100 30 10 t=1ms 3 1 0.3 100ms 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC 10ms 60 2SK3049 P D  Ta 10 (1) TC=Ta (2) Without heat sink IAS max. IAS  L-load TC=25˚C Allowable power dissipation PD (W) Non repetitive pulse TC=25˚C Avalanche current IAS (A) 50 3 62.5mJ Drain current ID (A) 40 (1) 30 1 0.3 20 0.1 10 (2) 0 0 20 40 60 80 100 120 140 160 0.03 0.01 0.1 0.3 1 3 10 Drain to source voltage VDS (V) Ambient temperature Ta (˚C) L-load (mH) ID  VGS VDS=25V RDS(on)  ID Drain to source ON-resistance RDS(on) (Ω) 2.5 5 | Yfs |  ID Forward transfer admittance |Yfs| (S) VGS=10V VDS=25V TC=0˚C 4 25˚C 100˚C 3 10 8 2.0 TC=100˚C Drain current ID (A) TC=100˚C 6 1.5 25˚C 1.0 0˚C 4 25˚C 0˚C 2 2 0.5 1 0 0 2 4 6 8 10 0 0 2 4 6 8 0 0 2 4 6 8 Gate to source voltage VGS (V) Drain current ID (A) Drain current ID (A) Rth(t)  t 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) Thermal resistance Rth(t) (˚C/W) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 2