2SK3124

Power F-MOS FETs 2SK3124 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q No secondary breakdown q High electrostatic breakdown voltage 6.5±0.1 5.3±0.1 4.35±0.1 unit: mm 2.3±0.1 0.5±0.1 s Applications q High-speed switching (switching power supply) q For high-frequency power amplification 7.3±0.1 1.8±0.1 2.5±0.1 0.8max 0.93±0.1 1.0±0.1 0.1±0.05 0.5±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 400 ±20 ±0.5 ±1 0.25 10 1 150 −55 to +150 Unit V V A A mJ W °C °C 0.75±0.1 2.3±0.1 4.6±0.1 1 2 3 Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * 1: Gate 2: Drain 3: Source U Type Package TC = 25°C Ta = 25°C L = 2mH, IL = 0.5A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) VDD = 100V, ID = 0.1A VGS = 10V, RL = 1Ω Conditions VDS = 320V, VGS = 0 VGS = ±20V, VDS = 0 ID = 1mA, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 0.1A VDS = 10V, ID = 0.1A IDR = 0.1A, VGS = 0 48 VDS = 10V, VGS = 0, f = 1MHz 10 5 65 35 40 70 12.5 125 100 400 1 17 160 −1.5 3 23 min typ max 10 ±1 Unit µA µA V V Ω mS V pF pF pF ns ns ns ns °C/W °C/W Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Thermal resistance between channel and case Thermal resistance between channel and atmosphere 1.0±0.2 1