Silicon MOS FETs (Small Signal)
2SK614
Silicon N-Channel MOS FET
For switching
unit: mm
5.0±0.2
5.1±0.2
4.0±0.2
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL
13.5±0.5
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0.5 ±1 750 150 −55 to +150 Unit V V A
0.45 –0.1
+0.2
0.45 –0.1
+0.2
1.27
1.27
123
2.54±0.15
A mW °C °C
s Electrical Characteristics (Ta = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Coss ton*2 toff
*2 *1
Conditions VDS = 60V, VGS = 0 VGS = 20V, VDS = 0 IDS = 100µA, VGS = 0 ID = 1mA, VDS = VGS ID = 0.5A, VGS = 10V ID = 0.2A, VDS = 15V, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz
min
typ
2.3±0.2
1: Source 2: Drain 3: Gate JEDEC: TO-92 EIAJ: SC-43 TO-92 Type Package
max 10 0.1
Unit µA µA V
80 1.5 2 300 45 30 8 15 20 3.5 4
V Ω mS pF pF pF ns ns
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time
*1 *2
Pulse measurement ton, toff measurement circuit
Vout Vin = 10V 68Ω 50Ω VDD = 30V Vin Vout 10% Vin 10% 90%
t = 1µS f = 1MHZ
90% V
out
ton
toff
1
Silicon MOS FETs (Small Signal)
PD Ta
1200 1.2 Ta=25˚C 1.0 VGS=5.5V 1.0
2SK614
ID VDS
1.2 VDS=10V Ta=25˚C
ID VGS
Allowable power dissipation PD (mW)
1000
Drain current ID (A)
800
0.8
5V
Drain current ID (A)
0.8
600
0.6
4.5V
0.6
400
0.4
4V
0.4
3.5V 200 0.2 3V 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 0.2
Ambient temperature Ta (˚C)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
| Yfs | VGS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
600
Ciss, Coss, Crss VDS
VDS=15V f=1kHz Ta=25˚C VGS=0 f=1MHz Ta=25˚C
RDS(on) VGS
Drain to source ON-resistance RDS(on) (Ω)
6 ID=500mA 5
120
Forward transfer admittance |Yfs| (mS)
500
100
400
80
4
300
60
3 Ta=75˚C 2 25˚C –25˚C
200
40
Ciss
100
20 Coss 0 1 3 10 30 Crss 100 300 1000
1
0 0 1 2 3 4 5 6
0 0 4 8 12 16 20
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
RDS(on) Ta
Drain to source ON-resistance RDS(on) (Ω)
6 ID=500mA 5
4 VGS=5V
3
10V 2
1
0 –50
–25
0
25
50
75
Ambient temperature Ta (˚C)
2
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