2SK655

Silicon MOS FETs (Small Signal) 2SK655 Silicon N-Channel MOS FET For switching unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q High-speed switching q Allowing to supply with the radial taping s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 1 2 3 1.27 1.27 2.54±0.15 1: Source 2: Drain 3: Gate EIAJ: SC-72 New S Type Package Internal Connection D G S s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time * Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω min typ max 10 50 3.5 50 2.0±0.2 marking +0.2 0.45–0.1 15.6±0.5 50 1.5 20 35 10 4 0.5 10 20 15 5 1 Unit µA µA V V Ω mS pF pF pF ns ns ton, toff measurement circuit Vout 200Ω Vin VDD = 5V Vout 10% 10% 90% ton toff 90% 50Ω 100µF VGS = 5V 1 Silicon MOS FETs (Small Signal) PD  Ta 240 120 2SK655 ID  VDS 60 | Yfs |  VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS=5V Ta=25˚C 50 Allowable power dissipation PD (mW) 200 100 Drain current ID (mA) VGS=6.0V 80 5.5V 5.0V 60 160 40 120 4.5V 30 80 40 4.0V 3.5V 3.0V 2.5V 0 2 4 6 8 10 12 20 40 20 10 0 0 20 40 60 80 100 120 140 160 0 0 0 2 4 6 8 10 12 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) Ciss, Coss, Crss  VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 12 VGS=0 f=1MHz Ta=25˚C 120 ID  VGS Drain to source ON-resistance RDS(on) (Ω) 120 VDS=5V Ta=25˚C 100 RDS(on)  VGS ID=20mA 100 10 Ciss 8 Drain current ID (mA) 80 Ta=–25˚C 25˚C 80 6 60 75˚C 60 Ta=75˚C 25˚C –25˚C 4 Coss 2 Crss 1 3 10 30 100 40 40 20 20 0 0 0 2 4 6 8 10 12 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Gate to source voltage VGS (V) VIN  IO 100 30 VO=5V Ta=25˚C Input voltage VIN (V) 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 2