2SK656

Silicon MOS FETs (Small Signal) 2SK656 Silicon N-Channel MOS FET For switching unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 1 2 3 1.27 1.27 2.54±0.15 1: Source 2: Drain 3: Gate EIAJ: SC-72 New S Type Package Internal Connection D R1 G R2 S s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VOH VOL R1 + Coss ton *2 Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200Ω VDD = 5V, VGS = 5V, RL = 200Ω min typ max 10 2.0±0.2 s Absolute Maximum Ratings (Ta = 25°C) marking +0.2 0.45–0.1 15.6±0.5 Unit µA µA V 40 50 1.5 80 3.5 50 V Ω mS V 20 4.5 35 1 100 9 200 V kΩ pF pF pF µs µs R2*1 VDS = 10V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time Turn-off time *1 *2 4.5 1.1 1 1 toff*2 Resistance ratio R1/R2 = 1/50 Pulse measurement 1 Silicon MOS FETs (Small Signal) PD  Ta 240 120 Ta=25˚C 200 100 100 2SK656 ID  VDS 120 VDS=5V ID  VGS Allowable power dissipation PD (mW) Drain current ID (mA) 160 80 Drain current ID (mA) VGS=6.0V 5.5V 5.0V 4.5V 40 80 Ta=–25˚C 25˚C 120 60 60 75˚C 80 4.0V 3.5V 3.0V 40 40 20 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs |  VGS 50 Ciss, Coss  VDS Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) VDS=5V Ta=25˚C VGS=0 f=1MHz Ta=25˚C Ciss 8 RDS(on)  VGS Drain to source ON-resistance RDS(on) (Ω) 120 ID=20mA 100 12 Forward transfer admittance |Yfs| (mS) 40 10 80 30 6 60 Ta=75˚C 20 4 Coss 40 25˚C –25˚C 10 2 20 0 0 2 4 6 8 10 0 0.1 0 0 2 4 6 8 10 0.3 1 3 10 30 100 Gate to source voltage VGS (V) Drain to source voltage VDS (V) Gate to source voltage VGS (V) IO  VIN 10 3 VO=5V Ta=25˚C 1000 300 VIN  IO VO=1V Ta=25˚C Output current IO (mA) 0.3 0.1 0.03 0.01 0.003 0.001 0 1 2 3 4 5 Input voltage VIN (V) 1 100 30 10 3 1 0.3 0.1 0.1 0.3 1 3 10 30 100 Input voltage VIN (V) Output current IO (mA) 2