2SK657

Silicon MOS FETs (Small Signal) 2SK657 Silicon N-Channel MOS FET For switching unit: mm s Features q High-speed switching q M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.5 0.4 6.9±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 2.5±0.1 1.0 1.0 1.0±0.1 R 0. 7 0.85 Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 ±100 ±200 400 150 −55 to +150 Unit V V mA mA mW °C °C 3 2 1 2.5 2.5 1: Gate 2: Drain 3: Source EIAJ: SC-71 M Type Mold Package Internal Connection D G 1.25±0.05 s Absolute Maximum Ratings (Ta = 25°C) 0.55±0.1 0.45±0.05 S s Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time * Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω min typ max 10 50 3.5 50 15 6 1.2 50 1.5 20 10 20 ton, toff measurement circuit Vout 200Ω Vin VDD = 5V Vout 10% 10% 90% ton toff 90% 50Ω 100µF VGS = 5V 4.1±0.2 4.5±0.1 Unit µA µA V V Ω mS pF pF pF ns ns 1 Silicon MOS FETs (Small Signal) PD  Ta 0.7 120 2SK657 ID  VDS 60 | Yfs |  VGS Forward transfer admittance |Yfs| (mS) Ta=25˚C VDS=5V Ta=25˚C 50 Allowable power dissipation PD (W) 0.6 100 0.5 Drain current ID (mA) VGS=6.0V 80 5.5V 5.0V 60 40 0.4 0.3 4.5V 30 40 0.2 4.0V 3.5V 3.0V 2.5V 0 2 4 6 8 10 12 20 0.1 20 10 0 0 20 40 60 80 100 120 140 160 0 0 0 2 4 6 8 10 12 Ambient temperature Ta (˚C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) Ciss, Coss, Crss  VDS Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 12 VGS=0 f=1MHz Ta=25˚C 120 ID  VGS Drain to source ON-resistance RDS(on) (Ω) 120 VDS=5V Ta=25˚C 100 RDS(on)  VGS ID=20mA 100 10 Ciss 8 Drain current ID (mA) 80 Ta=–25˚C 25˚C 80 6 60 75˚C 60 Ta=75˚C 25˚C –25˚C 4 Coss 2 Crss 1 3 10 30 100 40 40 20 20 0 0 0 2 4 6 8 10 12 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V) Gate to source voltage VGS (V) Gate to source voltage VGS (V) VIN  IO 100 30 VO=5V Ta=25˚C Input voltage VIN (V) 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 100 Output current IO (mA) 2