AN1101SSM

Operational Amplifier AN1101SSM CMOS single power supply ■ Overview AN1101SSM is an operational amplifier with a single power supply by CMOS diffusion process. It has low current-consumption compared to general purpose operational amplifier by bipolar diffusion process. 0 V to VDD is available for both input voltage and output voltage. And this IC is widely applicable to the butterydriven equipment and to many amplifier circuits which adopt small package products. 0.20 5 0.20+0.10 -0.05 4 Unit: mm 0.10 M 1.60±0.10 1.20±0.10 0.20 1 2 3 0.50 0.50 1.00±0.10 1.60±0.10 0.60 max. 0 to 0.10 ■ Features • Low current-consumption: IDD = 55 µA (typ.), VDD = 3 V • Operating input/output voltage range: 0 V to VDD • Small offset voltage: 0.5 mV (typ.) • Small input bias current: 1 pA (typ.) • Operating supply voltage range: 2.5 V to 5.5 V or ±1.25 V to ±2.75 V 0.10 1 2 3 Seating plane 5 4 SSMINI-5DA (Lead-free package) ■ Applications • Various small-size general consumer electronics equipment ■ Block Diagram VDD 5 VIN− 4 1 VOUT 2 GND (VSS) 3 VIN+ ■ Pin Descriptions Pin No. 1 2 3 4 5 Symbol VOUT GND (VSS) VIN+ VIN− VDD Output Ground, VSS (negative supply) at using two power supply Input (positive) Input (negative) Power supply Description Note) The AN1101SSM has been designed for general consumer electronics equipment, not for the specific one requiring such a high reliability that may prevent it from threatening the human lives. 0.08+0.10 -0.05 Publication date: August 2002 SFB00001CEB 1 AN1101SSM ■ Absolute Maximum Ratings Parameter Supply voltage Differential input voltage Input voltage Supply current Power dissipation *2 *1 Symbol VDD DVIN VIN IDD PD Topr Tstg Rating 5.6 ±5.6 VSS to VDD  50 −30 to +85 −55 to +125 Unit V V V mA mW °C °C Operating ambient temperature Storage temperature *1 Note) 1. *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C. *2: The value at Ta = +85°C. 2. This IC is not suitable for car electrical equipment. ■ Recommended Operating Range Parameter Supply voltage Symbol VDD Range 2.5 to 5.5 ±1.25 to ±2.75 Unit V ■ Electrical Characteristics at VDD = 3.0 V, VSS = GND, Ta = 25°C ± 2°C Parameter Input offset voltage Common-mode input voltage Open-loop gain Maximum output amplitude voltage 1 Maximum output amplitude voltage 2 Common-mode input voltage rejection ratio Supply voltage ripple rejection ratio * Supply current Symbol VIO CMVIN GV VOH VOL CMRR SVRR IDD Conditions Buffer circuit RS = 10 kΩ, RF = 10 kΩ f = 100 Hz RL ≥ 10 kΩ RL ≥ 10 kΩ VIN = 0.0 V to 3.0 V, RS = RF = 10 kΩ VDD = 2.5 V to 5.5 V No load Min  0 60 2.90  50 55  Typ 0.5  90 2.98 0.01 65 70 55 Max 5.5 3   0.05   100 Unit mV V dB V V dB dB µA Note) * : Except for the supply voltage ripple rejection ratio (SVRR), VDD = 3 V. • Design reference data Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. Parameter Offset current Input bias current Slew rate Zero-cross frequency Symbol IO IIO SR fT Conditions   RL ≥ 10 kΩ AV = 1 Reference 1 1 0.35 0.8 Unit pA pA V/µs MHz 2 SFB00001CEB AN1101SSM ■ Technical Data • PD  Ta curve of SSMINI-5DA 0.200 Independent IC without a heat sink Rth( j-a) = 833.3°C/W PD  Ta Power dissipation PD (W) 0.150 0.120 0.100 0.050 0.000 0 25 50 75 85 100 125 • Main characteristics Supply current  Supply voltage 80 70 Ambient temperature Ta (°C) Low-level output voltage  Output flow-in current 1.2 Buffer circuit VDD = 3 V VIN+ = 0 V Low-level output voltage VOL (V) 6 1.0 Supply current IDD (µA) 60 50 40 30 20 10 0 2.5 3 3.5 4 4.5 5 5.5 Buffer circuit VIN+ = VDD / 2 No load 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 Supply voltage VDD (V) Output flow-in current IO (mA) High-level output voltage  Output flow-out current 3.0 3V 2.8 2V 2.6 1V 2.4 0V 2.2 3V 2.0 1.8 1.6 0V 0 0 1 2 3 4 5 0 Buffer circuit VDD = 3 V VIN+ = 3 V 2V 1V Slew rate SR Buffer circuit VDD = 3 V No load High-level output voltage VOL (V) Input Output 10 20 30 40 50 Output flow-out current −IO (mA) SFB00001CEB (µs) 3 AN1101SSM ■ Technical Data (continued) • Main characteristics (continued) Offset voltage  Ambient temperature 3 Buffer circuit VDD = 3 V VIN+ = VDD / 2 80 70 Buffer circuit VDD = 3 V VIN+ = VDD / 2 Supply current  Ambient temperature 2 Offset voltage VIO (mV) 1 0 −1 −2 −3 Supply current IDD (µA) −25 60 50 40 30 20 10 0 −50 −50 0 25 50 75 100 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Voltage gain · Phase  Frequency characteristics 60 50 40 VDD = 3 V AV = 40 dB No load 180 135 Voltage gain (dB) Phase 30 Voltage gain 20 90 45 0 10 −45 0 −10 −20 100 2k 10k 100k 1M 10M Frequency f (Hz) ■ Application Circuit Example VDD 0.1 µF 5 Phase ( ° ) VIN− 4 1 VOUT 2 GND (VSS) 3 VIN+ 4 SFB00001CEB Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL