Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879
Unit: mm
5.9± 0.2 4.9± 0.2
q q
High collector to emitter voltage VCEO. High transition frequency fT.
+0.3 +0.2
Parameter Collector to base voltage 2SC1573 2SC1573A 2SC1573B 2SC1573 Collector to emitter voltage 2SC1573A 2SC1573B
Symbol
Ratings 250
Unit
2.54± 0.15 13.5± 0.5
VCBO
300 400 200
V
0.7–0.2
s Absolute Maximum Ratings
(Ta=25˚C)
0.7± 0.1
8.6± 0.2
s Features
VCEO VEBO ICP IC PC Tj Tstg
300 400
V
0.45–0.1 1.27 1.27
0.45–0.1
+0.2
Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
100 70 1 150 –55 ~ +150
mA mA W ˚C ˚C
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage 2SC1573 2SC1573A 2SC1573B 2SC1573 2SC1573A 2SC1573B
(Ta=25˚C)
Symbol ICBO VCEO Conditions VCB = 12V, IE = 0 200 IC = 100µA, IB = 0 300 400 5 VEBO hFE* VCE(sat) fT IE = 1µA, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 Cob 4 10 8 pF 7 30 220 1.2 V MHz V V min typ max 2 Unit µA
Emitter to base voltage
Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*h
2SC1573 2SC1573A 2SC1573B
FE
Rank classification
P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE
Rank
*2SC1573 for Ranks Q and R only
3.2
Emitter to base voltage
7
V
1
2
3
1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package
1
Transistor
PC — Ta
1.2 120
2SC1573, 2SC1573A, 2SC1573B
IC — VCE
1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 80 0.8mA 0.6mA 0.4mA 40 0.2mA 20 120 Ta=25˚C IB=2mA 100 25˚C VCE=10V
IC — VBE
Collector power dissipation PC (W)
1.0
100
Collector current IC (mA)
Collector current IC (mA)
Ta=75˚C 80
–25˚C
0.8
0.6
60
60
0.4
40
0.2
20
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
IC — IB
Collector to emitter saturation voltage VCE(sat) (V)
120 VCE=10V Ta=25˚C 100 100 30
VCE(sat) — IC
IC/IB=10 3.0
IB — VBE
VCE=10V Ta=25˚C 2.5
Collector current IC (mA)
80
Base current IB (mA)
100
10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C Ta=75˚C
2.0
60
1.5
40
1.0
–25˚C
20
0.5
0 0 0.4 0.8 1.2 1.6 2.0
0 0.3 1 3 10 30 0 0.2 0.4 0.6 0.8 1.0
Base current IB (mA)
Collector current IC (mA)
Base to emitter voltage VBE (V)
hFE — IC
360 VCE=10V 160
fT — I E
10
Cob — VCB
Collector output capacitance Cob (pF)
VCB=10V Ta=25˚C 9 8 7 6 5 4 3 2 1 0 IE=0 f=1MHz Ta=25˚C
Forward current transfer ratio hFE
300
Transition frequency fT (MHz)
10 30 100
140 120 100 80 60 40 20
240
180 Ta=75˚C 120 25˚C –25˚C 60
0 0.1
0.3
1
3
0 –1
–3
–10
–30
–100
1
3
10
30
100
Collector current IC (mA)
Emitter current IE (mA)
Collector to base voltage VCB (V)
2
Transistor
ICBO — Ta
104 VCB=250V 104
2SC1573, 2SC1573A, 2SC1573B
IEBO — Ta
VEB=5V
Area of safe operation (ASO)
1000 300 Single pulse Ta=25˚C
103
103
Collector current IC (A)
100 30 10 3 1 0.3
ICP IC DC t=1ms
t=10ms
ICBO (Ta) ICBO (Ta=25˚C)
102
ICEO (Ta) ICEO (Ta=25˚C)
102
10
10
1 0 40 80 120 160 200
1 0 40 80 120 160 200
0.1 1 3 10 30 100 300 1000
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
3
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