CNA1006N

Transmissive Photosensors (Photo Interrupters) CNA1006N Photo Interrupter Unit : mm For contactless SW, object detection Overview CNA1006N is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 2.5 1.5 16.6 11.8 3.0+0.2 –0.3 A Optical center (3.8) 1.6 6.0 1.5 Features Highly precise position detection : 0.3 mm Gap width : 3 mm The type direetly attached to PCB (with positioning pins and fixing hooks) A' 4-0.45 (7.6) 15.0 12.6±0.3 2 3 3.5 3.5±0.5 2-1.5 2 2-ø1.0 +0 –0.05 1 2.0±0.1 2.0±0.1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 3 50 75 20 30 5 100 – 30 to +100 Unit V mA mW mA V V mW ˚C ˚C 1 4 1: Anode 3: Collecter 2: Cathode 4: Emitter (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. Fitting strength is 2N min. (Static load) *1 Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC *2 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. Topr –25 to +85 Tstg Electrical Characteristics (Ta = 25˚C) Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Symbol VF IR ICEO V R = 3V VCE = 10V 0.7 5 10 Conditions IF = 20mA min typ 1.25 max 1.4 10 200 14 0.4 Unit V µA nA mA V µs Collector current IC VCE = 5V, IF = 20mA Transfer Collector to emitter saturation voltage VCE(sat) IF = 40mA, IC = 1mA characteristics Response time tr , tf* VCC = 5V, IC = 1mA, RL = 100Ω * Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf ,, ,, 50Ω RL td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) ,,, , SEC A-A' (2.54) 2-3.3 3 4 Pin connection 0.5±0.1 6.5 5.0 Slit width 1.5±0.1 1 CNA1006N Transmissive Photosensors (Photo Interrupters) IF , IC — Ta 60 60 IF — VF 1.6 Ta = 25˚C VF — Ta IF = 50mA IF , IC (mA) 50 IF 50 IF (mA) Forward current, collector current VF (V) 1.2 10mA 1mA 0.8 40 40 30 IC Forward current 30 20 20 Forward voltage 0 0.4 0.8 1.2 1.6 2.0 2.4 0.4 10 10 0 – 25 0 20 40 60 80 100 0 0 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Forward voltage VF (V) Ambient temperature Ta (˚C ) IC — IF 10 2 VCE = 5V Ta = 25˚C 10 2 IC — VCE 160 Ta = 25˚C IC — Ta VCE = 5V IF = 20mA IC (mA) 10 IC (mA) 10 IF = 30mA 20mA 10mA IC (%) Relative output current 10 2 120 Collector current 1 Collector current 1 80 10 –1 10 –1 40 10 –2 10 –1 1 10 10 2 10 –2 10 –1 1 10 0 – 40 – 20 0 20 40 60 80 100 Forward current IF (mA) Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C ) ICEO — Ta 10 3 VCE = 10V 10 2 tr — IC VCC = 5V Ta = 25˚C 100 IC — d VCE = 5V Ta = 25˚C IF = 20mA 10 2 IC (%) ICEO (nA) 10 10 Relative output current 100Ω 1 60 Dark current 1 Rise time 40 10 –1 10 –1 Sig.IN Sig. OUT 50Ω VCC Sig. OUT RL 90% 10% 20 10 –2 – 40 – 20 , ,, 0 20 40 60 80 100 10 –2 10 –1 tr td tf 102 0 0 1 2 3 4 5 6 1 10 Ambient temperature Ta (˚C ) Collector current IC (mA) Distance d (mm) 2 ,, d RL = 1kΩ 500Ω 80 Criterion 0 tr (µs)