CNA1311K

Transmissive Photosensors (Photo Interrupters) CNA1311K Photo Interrupter For contactless SW, object detection A side (1.5) (0.15) B side Unit : mm Overview CNA1311K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package. (1.8) 4.0 1.0 A With gate A Side or B Side Optical center 2.6 (C0.5) 1.5 1.5 Slit width (0.15) 5.0 min. 3.3 2.3 (0.9) 1.5 2-0.4 A' *3.0 1 3 *2.0 Features Ultraminiature : 2.6 × 4.0 mm (height : 3.3 mm) Highly precise position detection : 0.05 mm Gap width : 1.0 mm Not soldered 1.0 max. 2-0.2+0.2 –0.1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 6 50 75 20 35 6 75 –40 to +100 260 Unit V mA mW mA V V mW 2 4 Pin connection 1: Anode 3: Collecter 2: Cathode 4: Emitter (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. * is dimension at the root of leads 2 4 *1 Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Operating ambient temperature Temperature Storage temperature Soldering temperature PC *2 Input power derating ratio is 1.0mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.0mW/˚C at Ta ≥ 25˚C. *3 Soldering time is within 5 seconds. Topr –25 to +85 Tstg Tsol*3 Electrical Characteristics (Ta = 25˚C) Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Symbol VF IR ICEO V R = 3V VCE = 20V 50 50 Conditions IF = 20mA min typ 1.2 max 1.4 10 100 600 0.4 Unit V µA nA µA V µs Collector current IC VCE = 5V, IF = 5mA Transfer Collector to emitter saturation voltage VCE(sat) IF = 10mA, IC = 40µA characteristics Response time tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000Ω * Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) ,, ,, 50Ω RL ,, ,, ,,, ˚C ˚C ˚C Soldering bath more than 1mm ,, , SEC. A-A' 1 (0.45) 2-0.5 3 1 CNA1311K Transmissive Photosensors (Photo Interrupters) IF , IC — Ta 60 60 IF — VF 5 Ta = 25˚C IC — IF VCE = 5V Ta = 25˚C IF , IC (mA) 50 IF 50 Forward current, collector current 40 IF (mA) 40 IC (mA) Collector current 0 0.4 0.8 1.2 1.6 2.0 2.4 4 3 30 IC Forward current 30 2 20 20 10 10 1 0 – 25 0 20 40 60 80 100 0 0 0 5 10 15 20 25 Ambient temperature Ta (˚C ) Forward voltage VF (V) Forward current IF (mA) VF — Ta 1.6 3 IC — VCE 120 Ta = 25˚C IF = 50mA 100 IC — Ta VCE = 5V IF = 5mA VF (V) 1.2 10mA IC (mA) IC (%) 2 80 Forward voltage 0.8 Collector current 1mA Relative output current IF = 20mA 1 15mA 10mA 5mA 2mA 0 1 2 3 4 5 6 60 40 0.4 20 0 – 40 – 20 0 20 40 60 80 100 0 0 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C ) ICEO — Ta 1 VCE = 20V 10 3 tr — IC VCC = 5V 10 3 tf — IC VCC = 5V 10 –1 ICEO (µA) 10 2 10 2 tr (µs) tf (µs) RL = 2kΩ 1kΩ 10 100Ω 10 –2 RL = 2kΩ 1kΩ 10 100Ω Rise time Dark current 10 –3 1 10 –4 Sig.IN Sig. OUT 50Ω VCC Sig. OUT RL 90% 10% Fall time 1 Sig.IN Sig. OUT 50Ω VCC Sig. OUT RL 90% 10% 10 –5 – 40 – 20 , ,, 0 20 40 60 80 100 10 –1 10 –2 tr tf 10 ,, 10 –1 10 –2 10 –1 td tr 1 td tf 10 10 –1 1 Ambient temperature Ta (˚C ) Collector current IC (mA) Collector current IC (mA) 2 Transmissive Photosensors (Photo Interrupters) CNA1311K IC — d 100 100 IC — d VCE = 5V Ta = 25˚C IF = 5mA VCE = 5V Ta = 25˚C IF = 5mA Relative output current IC (%) ,,, Criterion 0 d 0 0.4 0.8 1.2 1.6 2.0 80 Relative output current IC (%) 80 Criterion 0 60 60 40 40 20 20 0 0 0 0.4 Distance d (mm) ,, , d 0.8 1.2 1.6 2.0 Distance d (mm) 3