CNC7H501

CNC7H501

  • 厂商:

    PANASONIC

  • 封装:

  • 描述:

    CNC7H501 - Optoisolators - Panasonic Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
CNC7H501 数据手册
Optoisolators (Photocouplers) CNZ3731, CNC7C501, CNZ3734 CNC2S501, CNC7C502, CNC7H501 Optoisolators Overview The CNZ3731 series of optoisolators consist of a GaAs infrared LED which is optically coupled with a Si NPN Darlington phototransistor, and housed in a small DIL package. The series provides high I/O isolation voltage and high collector/emitter isolation voltage, as well as a high current transfer ratio (CTR). This opto isolator series also includes the two-channel CNC7C501 and the fourchannel CNZ3734, and A type of these models with increased collector to emitter breakdown voltage (VCEO > 350V). CNZ3731/CNC2S501 LED Mark 4.58±0.3 1 2 7.62±0.3 6.2±0.5 5.2 max. 0.5 min. 4 3 4-0.5±0.1 4-1.2±0.15 2.54±0.25 15˚ Unit : mm 2.54 min. 3.85±0.3 2.0 0.25 –0 +0.15 0 to 15˚ 0 to 1: Anode 2: Cathode 3: Emitter 4: Collector CNC7C501/CNC7C502 LED Mark 1 2 3 4 7.62±0.3 6.2±0.5 3.85±0.3 2.0 9.66±0.3 5.2 max. 0.5 min. 8 7 6 5 0.25 –0 +0.15 Unit : mm 2.54 min. Features High collector to emitter breakdown voltage : VCEO > 300 V, A type : VCEO > 350 V High current transfer ratio with Darlington phototransistor output : CTR = 4000% (typ.) High I/O isolation voltage : VISO ≥ 5000 Vrms Small DIL package for saving mounting space UL listed (UL File No. E79920) A-type models have a guaranteed internal insulating distance of 0.4 mm 0 5˚ to 1 0 5˚ to 1 1,3: Anodee 2,4: Cathode 5,7: Emitter 6,8: Collector CNZ3734/CNC7H501 LED Mark 1 2 3 4 5 6 7 8 7.62±0.3 6.2±0.5 3.85±0.3 2.0 5.2 max. 0.5 min. 16 15 14 13 12 11 10 9 0.25 –0 +0.15 Applications Telephone exchange FAX Programmable controllers Signal transfer between circuits with different potentials and impedances 19.82±0.5 Pin Connection CNZ3731 CNC2S501 1 4 CNZ3734 CNC7H501 1 16 0 5˚ to 1 1 , 3 , 5 , 7 : Anode 2 , 4 , 6 , 8 : Cathode 15˚ 9,11,13,15: Emitter 0 to 10,12,14,16: Collector 2 3 Top View 2 3 15 14 CNC7C501 CNC7C502 1 8 4 5 13 12 2 3 7 6 6 7 11 10 4 5 Top View 8 9 Top View 16-0.5±0.1 16-1.2±0.15 2.54±0.25 Telephones 8-0.5±0.1 8-1.2±0.15 2.54±0.25 Unit : mm 2.54 min. 1 CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Forward current (DC) Input (Light emitting diode) Pulse forward current Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Total power dissipation Isolation voltage, input to output Operating ambient temperature Storage temperature *1 *2 *3 Optoisolators (Photocouplers) Symbol VR IF IFP*1 PD *2 Ratings CNZ3731 6 50 1 75 150 300 0.3 300 320 5000 –30 to +100 –55 to +125 150 200 300 320 5000 –30 to +100 –55 to +125 CNC7C501 CNZ3734 CNC2S501 6 50 1 75 150 350 0.3 CNC7C502 CNC7H501 Unit V mA A mW mA V V IC VCEO VECO PC *3 150 200 mW mW Vrms ˚C ˚C PT VISO *4 Topr Tstg *4 Pulse width ≤ 100 µs, repeat 100 pps Input power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C. Output power derating ratio is 3.0 mW/˚C at Ta ≥ 25˚C (CNZ3731, CNC2S501). Output power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C (CNC7C501, CNC2S502, CNZ3734, CNC7H501). AC 1min., RH < 60 % Electrical Characteristics (Ta = 25˚C) Parameter Input Forward voltage (DC) characteristics Capacitance between pins Collector cutoff current Output characteristics Collector to emitter capacitance DC current transfer ratio Isolation capacitance, input to output Isolation resistance, input to output Transfer characteristics Rise time Fall time *1 DC Symbol IR VF Ct ICEO CC CTR*1 CISO RISO tr *2 Conditions VR = 3 V IF = 50mA VR = 0V, f = 1MHz VCE = 200V VCE = 10V, f = 1MHz VCE = 2V, IF = 1mA f = 1MHz VISO = 500V VCC = 10V, IC = 10mA, Rt = 100Ω min typ 1.35 30 max 10 1.5 200 Unit µA V pF nA pF % pF Ω µs µs Reverse current (DC) 10 1000 1011 40 15 1.0 4000 0.7 tf*3 Collector to emitter saturation voltage VCE(sat) IF = 1mA, IC = 2mA current transfer ratio (CTR) is a ratio of output current against DC input current. IC × 100 (%) IF V CTR = *2 *3 tr : Time required for the collector current to increase from 10% to 90% of its final value tf : Time required for the collector current to decrease from 90% to 10% of its initial value 2 Optoisolators (Photocouplers) CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 PD — Ta 200 400 PC — Ta 10 5 IFP — DR IFP (mA) Pulse width ≤ 100µs Ta = 25˚C PD (mW) PC (mW) 150 300 10 4 CNZ3731 CNC2S501 200 Allowable pulse forward current Collector power dissipation LED Power dissipation 100 10 3 50 100 CNC7C501/ CNC7C502 CNZ3734/ CNC7H501 10 2 0 – 30 0 25 50 75 100 125 0 – 30 0 25 50 75 100 125 10 10 –3 10 –2 10 –1 1 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Duty ratio DR IF — VF 60 Ta = 25˚C 50 160 Pc(max.) IC — VCE 10 3 IF = 5mA Ta = 25˚C IC — VCE(sat) Ta = 25˚C IF = 5mA IC (mA) IF (mA) IC (mA) 120 3mA 2mA 10 2 2mA 1mA 40 Collector current Collector current Forward current 30 80 1.5mA 10 0.5mA 20 1mA 40 1 10 0.5mA 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 2 4 6 8 10 –1 0 0.4 0.8 1.2 Forward voltage VF (V) Collector to emitter voltage VCE (V) Collector saturation voltage VCE(sat) (V) IC — IF 10 3 VCE = 2V Ta = 25˚C 10 6 CTR — IF 120 Relative CTR — Ta Relative DC current transfer ratio CTR (%) VCE = 2V Ta = 25˚C IF = 1mA VCE = 2V 10 2 DC current transfer ratio CTR (%) IC (mA) 10 5 100 Collector current 10 10 4 80 1 10 3 60 10 –1 10 –1 1 10 10 2 10 2 10 –1 1 10 10 2 40 – 40 – 20 0 20 40 60 80 100 Forward current IF (mA) Forward current IF (mA) Ambient temperature Ta (˚C ) 3 CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501 Optoisolators (Photocouplers) VCE(sat) — Ta 1.6 10 –5 IF = 1mA IC = 2mA 1.4 10 –6 ICEO — Ta VCE = 200V ICEO — VCE Ta = 25˚C Collector to emitter saturation voltage VCE(sat) (V) ICEO (A) 1.2 10 –7 Dark current Dark current 1.0 10 –8 ICEO (A) 10 –8 0.8 10 –9 10 –9 0.6 10 –10 0.4 – 40 – 20 0 20 40 60 80 100 10 –11 – 40 – 20 0 20 40 60 80 100 10 –10 10 10 –2 10 –3 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Response time — External load resistance characteristics 10 3 VCC = 10V IC = 10mA Ta = 25˚C tr Response time measurement circuit 10 2 Sig.IN tf td ts VCC V1 5ms Response time (µs) 10 V1 50Ω V2 td tr ts tf 90% 10% 1 10 –1 10 –2 10 –1 1 10 External load resistance RL (kΩ) Frequency characteristics 10 VCE = 4V Ta = 25˚C IC = 10mA RL = 10Ω ,,, , ,,, , +10V 50kΩ 16V 100µF – RL Measurement circuit of frequency characteristics VCC AV (dB) 0 Voltage gain ,, – 10 100Ω 1kΩ Sig.IN Sig.OUT 50Ω RL IC = 10mA 4mAp - p + – 20 50Ω 5kΩ ,,, 1 10 10 2 10 3 – 30 10 –1 Frequency f (kHz) 4 ,,, ,
CNC7H501
1. 物料型号: - CNZ3731、CNC7C501、CNZ3734、CNC2S501、CNC7C502、CNC7H501

2. 器件简介: - CNZ3731系列光耦由一个GaAs红外LED和一个Si NPN达林顿光电晶体管组成,封装在小型DIL封装中。该系列提供高I/O隔离电压和高集电极/发射极隔离电压,以及高电流传输比(CTR)。 - 包括双通道CNC7C501和四通道CNZ3734,以及这些型号的A型,其集电极到发射极击穿电压增加(V_{CEO}>350V)。

3. 引脚分配: - 文档中提供了CNZ3731、CNC2S501、CNZ3734、CNC7H501的引脚连接图,以及CNC7C501、CNC7C502的顶视图。

4. 参数特性: - 高集电极到发射极击穿电压:V_{CEO} ≥300V,A型:V_{CEO}>350V。 - 高电流传输比,达林顿光电晶体管输出:CTR=4000%(典型值)。 - 高I/O隔离电压:V_{ISO} ≥5000Vrms。

5. 功能详解: - 光耦器件用于在不同电位和阻抗的电路之间传输信号,提供电气隔离,保护电路不受高压损害。

6. 应用信息: - 电话、电话交换机、传真机、可编程控制器等。

7. 封装信息: - 小型DIL封装,节省安装空间,UL认证(UL文件编号E79920)。 - A型型号保证内部绝缘距离为0.4mm。
CNC7H501 价格&库存

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