CNZ2152

Reflective Photosensors (Photo Reflectors) CNZ2152 Reflective Photosensor Overview CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. 3.2±0.2 Mark for indicating LED side ø1.5 Unit : mm 8.0±0.2 3.5±0.2 1.0 +0.1 –0.2 14.0 +0.1 –0.2 16.0±0.3 ø2.2±0.2 1.0(typ.) Features Fast response High SN ratio High sensitivity 7.0 min. (10.0) 2 6.2±0.2 Detection of paper, film and cloth Detection of coin and bill Optical mark reading Detection of position and edge 1 Start, end mark detection of magnetic tape Absolute Maximum Ratings (Ta = 25˚C) Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector to emitter voltage Output (Photo Emitter to collector voltage transistor) Collector current Collector power dissipation Temperature Operating ambient temperature Storage temperature Reverse voltage (DC) Symbol Ratings VR IF PD*1 VCEO VECO IC PC*2 Topr 3 100 150 20 3 30 150 –25 to +85 Unit V mA mW V V mA mW ˚C ˚C (Note) ( ) Dimension is reference *1 Tstg –30 to +100 Input power derating ratio is 2.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 2.0 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Collector current Transfer characteristics Response time *1 *2 Transfer Symbol VF IR ICEO IC*1 IC*2 VR = 3 V VCE = 10V Conditions IF = 100mA min VCC = 5V, IF = 20mA, RL = 100Ω 0.8 tr*3 , tf*4 VCC = 10V, IC = 1mA, RL = 100Ω *3 Collector to emitter saturation voltage VCE(sat) IF = 100mA, IC = 1mA characteristics measurement circuit (Ambient light is shut off completely) IC VCC d = 5 mm *1 *2 IF *4 ,, ,, ,,, , , ,, ,, , Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector current to decrease from 90% to 10% of its initial value. RL Test paper Standard white paper (reflective ratio 90%) Tracing paper (paper SM-1 for 2nd original paper) , ,, 3 4 1 23 4 Pin connection Applications 1.25 0.05 3 500 8 ,,,, ,,, ø0.9+0.1 –0.2 4-ø0.45 (2.54) 10.0±0.2 typ max 1.5 10 2 Unit V µA µA mA µA µs 0.6 V 1 CNZ2152 Reflective Photosensors (Photo Reflectors) IF , IC — Ta 120 120 IF — VF 1.6 Ta = 25˚C VF — Ta IF , IC (mA) 100 IF 100 IF = 100mA IF (mA) Forward current, collector current 80 80 VF (V) 1.2 50mA 60 Forward current 60 Forward voltage 0 0.4 0.8 1.2 1.6 2.0 2.4 0.8 40 IC 20 40 0.4 20 0 – 25 0 20 40 60 80 100 0 0 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Forward voltage VF (V) Ambient temperature Ta (˚C ) IC — IF 10 2 VCC = 5V Ta = 25˚C RL = 100Ω (1) White paper (Reflective ratio 90%) (2) Tracing paper (Paper SM - 1 for 2nd original paper) (1) 1 16 IC — VCE 160 IF = 100mA 80mA Ta = 25˚C IC — Ta VCC = 5V IF = 20mA RL = 100Ω 120 IC (mA) 10 IC (mA) 12 60mA 50mA 40mA 8 Relative output current Collector current Collector current IC (%) 20mA 10mA 30mA 80 (2) 10 –1 4 40 10 –2 10 –1 1 10 10 2 0 0 4 8 12 16 20 24 0 – 40 – 20 0 20 40 60 80 100 Forward current IF (mA) Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C ) ICEO — Ta 10 3 10 3 tr — IC VCC = 10V Ta = 25˚C 16 IC — d VCC = 5V Ta = 25˚C IF = 20mA RL = 100Ω 12 ICEO (µA) 10 2 tr (µs) 10 Mirror Collector current Rise time Dark current 10 1 VCE = 25V 10V 100Ω 8 1 10 –1 Sig.IN VCC Sig. V1 OUT V2 V2 RL 90% 10% 4 White paper (Reflective ratio 90%) 10 –2 – 40 – 20 , ,, V1 50Ω 0 20 40 60 80 100 10 –1 10 –2 tr td tf 10 0 0 2 4 6 8 10 12 10 –1 1 Ambient temperature Ta (˚C ) Collector current IC (mA) 2 , , d RL = 1kΩ IC (mA) 10 2 Distance d (mm)