This product complies with the RoHS Directive (EU 2002/95/EC).
FG694301
Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2)
For switching circuits Overview
FG694301 is N-P channel dual type small signal MOS FET employed small size surface mounting package.
Package
ode C SSMini6-F3-B in Name P 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2)
Features
Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) / 4 W (VGS = –4.0 V) High-speed switching Small size surface mounting package: SSMini6-F3-B Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package
4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1)
Marking Symbol: V7 Internal Connection
(D1) 6 (G2) 5 (S2) 4
Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
FET1 FET2
Absolute Maximum Ratings Ta = 25°C
Parameter Drain-source surrender voltage FET1 Gate-source surrender voltage Drain current Peak drain current Drain-source surrender voltage FET2 Gate-source surrender voltage Drain current Peak drain current Total power dissipation Overall Channel temperature Storage temperature Symbol VDSS VGSS ID IDP VDSS VGSS ID IDP PT Tch Tstg Rating 30 ±12 100 200 –30 ±12 –100 –200 125 150 -55 to +150 Unit V V mA mA V V mA mA mW °C °C
1 (S1)
2 (G1)
3 (D2)
Publication date: January 2011
Ver. AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
FG694301
Electrical Characteristics Ta = 25°C±3°C
FET1 Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit input capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on time * Turn-off time * Symbol VDSS IDSS IGSS VTH RDS(on) Yfs Ciss Coss Crss ton toff VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA VDS = 3 V, VGS = 0, f = 1 MHz Conditions ID = 1 mA, VGS = 0 VDS = 30 V, VGS = 0 VGS = ±10 V, VDS = 0 ID = 1.0 mA, VDS = 3.0 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V ID = 10 mA, VDS = 3.0 V 20 0.5 1.0 3 2 55 12 7 3 100 100 Min 30 1.0 ±10 1.5 6 3 Typ Max Unit V mA mA V W mS pF pF pF ns ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = 3 V ID = 10 mA RL = 300 Ω VGS = 0 V to 3 V VIN 50 Ω S G D VOUT VIN 90% 10% 10%
VOUT ton
90% toff
FET2 Parameter Drain-source surrender voltage Drain-source cutoff current Gate-source cutoff current Gate threshold voltage Drain-source ON resistance Forward transfer admittance Short-circuit input capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on time * Turn-off time * Symbol VDSS IDSS IGSS VTH RDS(on) Yfs Ciss Coss Crss ton toff VDD = -3 V VGS = 0 V to -3 V ID = -10 mA , , VDD = -3 V VGS = -3 V to 0 V ID = -10 mA , , VDS = -3 V, VGS = 0, f = 1 MHz Conditions ID = -1 mA, VGS = 0 VDS = -30 V, VGS = 0 VGS = ±10 V, VDS = 0 ID = -1.0 mA, VDS = -3.0 V ID = -10 mA, VGS = -2.5 V ID = -10 mA, VGS = -4.0 V ID = -10 mA, VDS = -3.0 V 20 - 0.5 -1.0 7 4 40 12 7 3 100 100 Min -30 -1.0 ±10 -1.5 17 7 Typ Max Unit V mA mA V W mS pF pF pF ns ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = −3 V 10% ID = −10 mA VIN RL = 300 Ω 90% VOUT D VGS = 0 V to −3 V G 90% VIN VOUT 10% 50 Ω S td(on) tr td(off) tf
2
Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
FG694301
Common characteristics chart PT Ta
200 150 125 100 75 50 0
FG694301_ PT-Ta
Total power dissipation PT (mW)
0
40
80
120
160
Ambient temperature Ta (°C)
CharacteristicFG694301(FET1)_1 -V s charts of FET I D DS ID VDS
100 Ta = 25°C VGS = 4.0 V 2.5 V 102
FG694301(FET1)_ ID-VGS
ID VGS
VDS = 3 V 102
FG694301(FET1)_ RDS(on)-VGS
Ta = 25°C ID = 0.01 A
RDS(on) VGS
80
60 2.1 V 40
1
Ta = 85°C
Drain-source ON resistance RDS(on) (Ω)
10
Drain current ID (mA)
Drain current ID (mA)
10
10−1
25°C
20 1.5 V 0 0 0.1 0.2 0.3 1.8 V 0.4 0.5
10−2
−30°C
1
10−3
0
0.5
1.0
1.5
2.0
2.5
Drain-source voltage VDS (V)
FG694301(FET1)_ RDS(on)-ID
102
Gate-source voltage VGS (V)
10−1
0
2
4
6
8
10
RDS(on) ID
Gate-source voltage VGS (V)
Ta = 25°C
Drain-source ON resistance RDS(on) (Ω)
10 VGS = 2.5 V 4.0 V 1
10−1 10−1
1
10
102
Drain current ID (mA)
Ver. AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
FG694301
FG694301(FET1)_Ciss , Crss , Coss -VDS
25
Ciss , Crss , Coss VDS
FG694301(FET1)_|Yfs|-ID
Yfs ID
Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF)
Ta = 25°C
1
20
15
Ciss
10
Coss Crss
5
0
Forward transfer admittance |Yfs | (S)
Ta = 25°C VDS = 3 V
10−1
10−2
0
5
10
15
20
10−3
1
10
102
103
Drain-source voltage VDS (V)
Drain current ID (mA)
CharacteristicFG694301(FET2)_2 -V s charts of FET I D DS ID VDS
−100 Ta = 25°C VGS = −4.5 V −2.5 V −102
FG694301(FET2)_ ID-VGS
ID VGS
FG694301(FET2)_ RDS(on)-VGS
RDS(on) VGS
103
−80
−10
−60
−1
Ta = 85°C
Drain-source ON resistance RDS(on) (Ω)
VDS = −3 V
Ta = 25°C ID = − 0.01 A
Drain current ID (mA)
Drain current ID (mA)
102
−40
−10−1
25°C
10
−20
−1.5 V
−10−2
−30°C
0
0
− 0.1
− 0.2
− 0.3
− 0.4
− 0.5
−10−3
0
− 0.5
−1.0
−1.5
−2.0
1
0
−2
−4
−6
−8
−10
Drain-source voltage VDS (V)
FG694301(FET2)_ RDS(on)-ID
Gate-source voltage VGS (V)
Gate-source voltage VGS (V)
RDS(on) ID
102
Ta = 25°C
Drain-source ON resistance RDS(on) (Ω)
10
VGS = −2.5 V −4.0 V
1
10−1 −10−1
−1
−10
−102
Drain current ID (mA)
4
Ver. AED
This product complies with the RoHS Directive (EU 2002/95/EC).
FG694301
FG694301(FET2)_Ciss , Crss , Coss -VDS
25
Ciss , Crss , Coss VDS
FG694301(FET2)_|Yfs|-ID
Yfs ID
Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF)
Ta = 25°C
1
20
15 Ciss 10 Coss Crss 0 −5 −10 −15 −20
5
0
Forward transfer admittance |Yfs | (S)
Ta = 25°C VDS = −3 V
10−1
10−2
10−3 −1 −10
−1
−10
−102
Drain-source voltage VDS (V)
Drain current ID (mA)
Ver. AED
5
This product complies with the RoHS Directive (EU 2002/95/EC).
FG694301
SSMini6-F3-B
Unit: mm
0.20 −0.02 6 5
+0.05
4
1.20 ±0.05
1.60 ±0.05
1
2 (0.5)
3 (0.5)
(5°)
0.13 −0.02
1.00 ±0.05 (0.27) (5°)
6
0 to 0.05
Ver. AED
0.55 ±0.05
0.20 ±0.05
+0.05
1.60 ±0.05
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