LN151F

Infrared Light Emitting Diodes LN151F, LN151L GaAs Infrared Light Emitting Diodes For optical control systems Features High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.) LN151F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package 21 ø5.75 max. 1: Anode 2: Cathode LN151L Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Unit : mm ø4.6±0.15 Glass lens Symbol PD IF IFP * Ratings 160 100 2 3 –25 to +100 –30 to+100 Unit mW mA A V ˚C ˚C 12.7 min. 6.3±0.3 2-ø0.45 ± 0.05 2.54±0.25 1. VR Topr Tstg 0 0± .2 1. 0± 0 .1 f = 100 Hz, Duty cycle = 0.1 % 5 3˚ 45± 21 ø5.75 max. 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle LN151F LN151L Symbol PO λP ∆λ VF IR Ct tr tf θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 50% min 5 typ 7.5 950 50 1.3 60 1 1 32 8 max Unit mW nm nm 1.6 10 V µA pF µs µs deg. deg. 1 Infrared Light Emitting Diodes LN151F, LN151L IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 3 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) 10 IFP (mA) Pulse forward current 1 10 10 2 IFP (A) 100 10 2 Allowable forward current 80 Pulse forward current 10 60 1 1 40 10 –1 20 10 –1 0 – 25 0 20 40 60 80 100 10 –2 10 –1 10 –2 0 1 2 3 4 5 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) VF — Ta 1.6 10 3 ∆PO — IFP (1) tw = 10µs Duty Cycle = 0.1% (2) DC Ta = 25˚C 10 ∆PO — Ta IF = 50mA ∆PO VF (V) 1.2 50mA 10mA 0.8 10 2 (1) Relative radiant power Forward voltage 10 Relative radiant power 10 3 10 4 ∆PO 1 (2) 1 10 10 2 10 –1 – 40 IF = 100mA 1 0.4 10 –1 0 – 40 0 40 80 120 10 –2 0 40 80 Ambient temperature Ta (˚C ) Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Spectral characteristics 100 IF = 100mA Ta = 25˚C Directivity characteristics 0˚ 100 90 10˚ 20˚ Ta = 25˚C 10 2 Frequency characteristics Ta = 25˚C Relative radiant intensity (%) LN151F 80 70 Relative radiant intensity(%) 80 30˚ 10 60 60 50 LN151L 40 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ Modulation output 1 40 30 20 10 –1 20 0 800 850 900 950 1000 1050 1100 10 –2 10 10 2 10 3 10 4 Wavelength λ (nm) Frequency f (kHz) 2