Infrared Light Emitting Diodes
LNA2701L
GaAs Bi-directional Infrared Light Emitting Diode
8˚
8˚
Unit : mm
For light source of VCR (VHS System)
0.5 max.
Features
Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59
2.8±0.2 2-C0.5
8˚
26
.5
˚
3.8±0.2 2.4±0.2 0.8
ø1.4±0.2
8˚
8˚
1.0
26 .5˚
16.9±1.0 Not soldered 2.0 0.8
2.8±0.2 1.3±0.2
8˚
2-R0.7
8˚
0.15 2-0.7 max. 2-0.5±0.1
(1.5)
Applications
Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor
0.5±0.1
2 1 2.0 1: Anode 2: Cathode
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 75 50 1 3 –25 to +65 – 30 to +85
Unit mW mA A V ˚C ˚C
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant intensity at center Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins
*
Symbol I e* λP ∆λ VF IR Ct
Conditions IF = 50mA IF = 20mA IF = 20mA IF = 50mA VR = 3V VR = 0V, f = 1MHz
min 1.2
typ 940 50 1.3 35
max
Unit mW/sr nm nm
1.5 10
V µA pF
Radiant intensity Ie shows each value of intensity I1 and I2 in two directions.
I1 I2
1
Infrared Light Emitting Diodes
LNA2701L
∆IF — Ta
60 10 2
IFP — Duty cycle
tw = 10µs Ta = 25˚C 80 70
∆IF — VF∆
Ta = 25˚C
∆IF (mA)
IFP (A)
50
10
∆IF (mA) Forward current
1 10 10 2
60 50 40 30 20 10
40
Allowable forward current
Pulse forward current
30
1
20
10 –1
10
0 – 25
0
20
40
60
80
100
10 –2 10 –1
0
0
0.4
0.8
1.2
1.6
Ambient temperature
Ta (˚C )
Duty cycle (%)
Forward voltage
VF (V)
∆Ie — IFP
10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.6
VF — Ta
10 3
∆Ie — Ta
IF = 20mA
Relative radiant intensity ∆Ie
VF (V)
10
(1)
1.2 10mA 1mA 0.8
1
(2)
Relative radiant intensity ∆Ie
120
IF = 50mA
Forward voltage
10 2
10 –1
0.4
10 –2
1
10
10 2
10 3
0 – 40
0
40
80
10 – 25
0
20
40
60
80
100
Pulse forward current
IFP (mA)
Ambient temperature
Ta (˚C )
Ambient temperature
Ta (˚C )
λP — Ta
1000 IF = 20mA 100
Spectral characteristics
IF = 20mA Ta = 25˚C
θ Direction light distribution characteristics
0˚ 30˚
100 90 80 70 60 50 40 30 20
λP (nm)
30˚
Relative radiant intensity (%)
980
80 60˚ 60 90˚ 40 120˚ 20 150˚
60˚
Peak emission wavelength
960
90˚
20 30 Relative radiant 40 intensity (%) 50 60 70 80 90 150˚ 100
940
120˚
920
180˚ 900 – 40 0 40 80 120 0 860 900 940 980 1020 1060 1100
Ambient temperature
Ta (˚C )
Wavelength λ (nm)
2
很抱歉,暂时无法提供与“LN159”相匹配的价格&库存,您可以联系我们找货
免费人工找货