LN175

Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems 1.5±0.2 Features High-power output, high-efficiency : PO = 12 mW (typ.) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ.) 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 min. (2.95) 2-1.2±0.3 2-0.45±0.15 0.45±0.15 1 2.54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 170 100 2 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Response time Half-power angle Symbol PO λP ∆λ VF IR Ct tr , t f θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IF = 100mA The angle in which radiant intencity is 50% min 7 typ 12 900 70 1.4 50 700 120 max Unit mW nm nm 1.7 10 V µA pF ns deg. 1 Infrared Light Emitting Diodes LN175 IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IFP (A) 10 Allowable forward current 80 IFP (A) Pulse forward current 1 10 10 2 100 1 Pulse forward current 60 1 40 10 –1 10 –1 20 0 – 25 0 20 40 60 80 100 10 –2 10 –1 10 –2 0 1 2 3 4 5 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆PO — IFP 10 3 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.6 VF — Ta 10 ∆PO — Ta IF = 100mA Relative radiant power ∆PO VF (V) 10 2 1.2 10mA 1mA 0.8 Forward voltage 10 (1) Relative radiant power ∆PO IF = 100mA 1 1 (2) 0.4 10 –1 10 –2 10 –3 10 –2 10 –1 1 10 0 – 40 0 40 80 120 10 –1 – 40 0 40 80 Pulse forward current IFP (A) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 960 IF = 100mA 100 Spectral characteristics IF = 100mA Ta = 25˚C Directivity characteristics 0˚ 10˚ 20˚ 30˚ Relative radiant intensity(%) Peak emission wavelength λP (nm) 40˚ 50˚ 60˚ 70˚ 80˚ Relative radiant intensity (%) 940 80 150 100 920 60 50 900 40 90˚ 100˚ 110˚ 880 20 120˚ 130˚ 860 – 40 0 40 80 120 0 780 820 860 900 940 980 1020 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2