Infrared Light Emitting Diodes
LN184
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems Features
High-power output, high-efficiency : PO = 5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : λP = 880 nm (typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems
4.5±0.2 2.0 (0.29)
,,,
ø4.6±0.15
1.0 max.
Unit : mm
Glass window Spherical lens
12.7 min.
(0.4)
2-ø0.45±0.05 2.45±0.25 2 1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
* Pulse
Symbol PD IF IFP
*
Ratings 190 90 230 3 –25 to +85 – 40 to +100
Unit mW mA mA V ˚C ˚C
ø4.0±0.1 ø5.75max.
1: Anode 2: Cathode
VR Topr Tstg
conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5%
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Rise time Fall time Half-power angle Symbol PO λP ∆λ VF IR tr tf θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V IFP = 100mA IFP = 100mA
The angle in which radiant intencity is 50%
min 3.5
typ 880 50 1.55 20 20 20
max
Unit mW nm nm
1.9 10
V µA ns ns deg.
1
LN184
Infrared Light Emitting Diodes
IF — Ta
120 160
IF — VF
1 Ta = 25˚C 140
IFP — VFP
tw = 10µs f = 100Hz Ta = 25˚C
IF (mA)
IF (mA)
120 100 80 60 40 20
Allowable forward current
80
Pulse forward current
Forward current
IFP (A)
10 –1 10 –2 0
100
60
40
20
0 – 25
0
20
40
60
80
100
0
0
0.5
1.0
1.5
2.0
1
2
3
4
5
Ambient temperature Ta (˚C )
Forward voltage VF (V)
Pulse forward voltage VFP (V)
∆PO — IFP
10 3 (1) tw = 10µs Duty = 0.1% (2) tw = 50µs Duty = 50% (3) DC Ta = 25˚C (1) 10 (2) (3) 1 1.8
VF — Ta
10
∆PO — Ta
IF = 100mA
Relative radiant power ∆PO
VF (V)
10 2
IF = 100mA 1.4
Relative radiant power ∆PO
1.6
Forward voltage
1
1.2
10mA
10 –1
1.0
1mA
10 –2 10 –3
10 –2
10 –1
1
10
0.8 – 40
0
40
80
120
10 –1 – 40
0
40
80
Pulse forward current IFP (A)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
1000 IF = 100mA 100
Spectral characteristics
IF = 100mA 80
Directivity characteristics
0˚ 100 90 10˚ 20˚
Peak emission wavelength λP (nm)
Relative radiant intensity (%)
900
80 70
Relative radiant intensity (%)
30˚
60
60 50 40
40˚ 50˚ 60˚ 70˚ 80˚ 90˚
800
40
30 20
700
20
600 – 40
0
40
80
120
0 780
820
860
900
940
980
1020
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
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