LN189L

Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0±0.15 1.0 0.6 1 0.4±0.1 3.0±0.15 Features High-power output, high-efficiency : PO = 5.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 20 ns (typ.) Infrared light emission close to monochromatic light : λP = 880 nm(typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems ,, , 2 3.2±0.15 0.75 0.35 Mark (Red) 0.38 0.6±0.1 0.2 Spherical lens ø0.55±0.05 0.6±0.1 0.5±0.1 1.5±0.2 ,, ,,, 0.15 Mini hollow mold resin package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2.0±0.2 1.5 Symbol PD IF IFP* VR Topr Tstg Ratings 190 100 0.2 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 0.1 max. 1.0 2.2±0.15 1: Anode 2: Cathode f = 10 kHz, Duty cycle = 25 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Rise time Fall time Half-power angle Precautions for Use [Airtightness] This product is not structured to provide a complete air seal. Therefore it cannot be immersed in solutions for purposes such as boiling tests or ultrasonic cleaning. [Ability to withstand soldering heat] The package of this product contains thermoplastic resin which has a limited ability to withstand heat. Therefore this product cannot be put through automated soldering operations in which the ambient temperature exceeds the specified temperature. The recommended soldering conditions are as follows. · Temperature of soldering iron tip : 260˚C or less : 300˚C or less or · Soldering time : 5 seconds or less : 1 second or less · Soldering position : At least 2 mm away from lead base Symbol PO λP ∆λ VF IR tr tf θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V IFP = 100mA IFP = 100mA The angle in which radiant intencity is 50% min 3 typ 5.5 880 50 1.55 20 20 20 max Unit mW nm nm 1.9 10 V µA ns ns deg. ] [Ability to withstand chemicals] If the transparent case requires cleaning, wipe it lightly using ethyl alcohol, methyl alcohol, or isopropyl alcohol. If you plan to use other solvents, carefully check to make sure there are no problems such as a misshapen case or a change in the condition of the case material. 1 LN189L Infrared Light Emitting Diodes IF — Ta 120 160 IF — VF 1 Ta = 25˚C 140 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IF (mA) 120 100 80 60 40 20 Allowable forward current 80 Pulse forward current Forward current IFP (A) 10 –1 10 –2 0 100 60 40 20 0 – 25 0 20 40 60 80 100 0 0 0.5 1.0 1.5 2.0 1 2 3 4 5 Ambient temperature Ta (˚C ) Forward voltage VF (V) Forward voltage VF (V) ∆PO — IF 10 3 (1) tw = 10µs Duty = 0.1% (2) tw = 50µs Duty = 50% (3) DC Ta = 25˚C (1) 10 (2) (3) 1.8 VF — Ta 10 ∆PO — Ta IF = 100mA Relative radiant power ∆PO VF (V) 10 2 IF = 100mA 1.4 Relative radiant power ∆PO 1.6 Forward voltage 1 1 1.2 10mA 10 –1 1.0 1mA 10 –2 10 –3 10 –2 10 –1 1 10 0.8 – 40 0 40 80 120 10 –1 – 40 0 40 80 Forward current IF (A) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 1000 IF = 100mA 100 Spectral characteristics IF = 100mA 80 Directivity characteristics 0˚ 100 90 80 10˚ 20˚ Peak emission wavelength λP (nm) 900 Relative radiant intensity (%) Relative radiant intensity (%) 30˚ 60 70 60 50 800 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 40 40 30 700 20 20 600 – 40 0 40 80 120 0 780 820 860 900 940 980 1020 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2