LN51F

Infrared Light Emitting Diodes LN51F, LN51L GaAs Infrared Light Emitting Diodes For optical control systems LN51F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 Features High-power output, high-efficiency : PO = 6 mW (typ.) Fast response : tr, tf = 1 µs (typ.) Infrared light emission close to monochromatic light : λP =950 nm (typ.) Narrow directivity, suitable for effective use of optical output : θ = 8 deg. (LN51L) Wide directivity, matched for external optical systems : θ = 32 deg. (LN51F) TO-18 standard type package 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± 21 ø5.75 max. 1: Cathode 2: Anode LN51L ø4.6±0.15 Glass lens Unit : mm Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 150 100 2 5 –25 to +100 –30 to +100 Unit mW mA A V ˚C ˚C 12.7 min. 6.3±0.3 2-ø0.45±0.05 2.54±0.25 VR Topr Tstg 1. 0 0± .2 f = 100 Hz, Duty cycle = 0.1 % 5 1. 0± 0 .1 3˚ 45± 21 ø5.75 max. 1: Cathode 2: Anode Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle LN51F LN51L Symbol PO λP ∆λ VF IR Ct tr tf θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 5V VR = 0V, f = 1MHz IFP = 100mA The angle in which radiant intencity is 50% min 3 typ 6 950 50 1.25 0.005 50 1 1 32 8 max Unit mW nm nm 1.5 10 V µA pF µs µs deg. deg. 1 LN51F, LN51L Infrared Light Emitting Diodes IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 120 IF — VF Ta = 25˚C 100 IF (mA) IFP (A) 100 10 IF (mA) Forward current 1 10 10 2 Allowable forward current 80 80 Pulse forward current 60 1 60 40 40 10 –1 20 20 0 – 25 0 20 40 60 80 100 10 –2 10 –1 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) IFP — VF 10 4 10 3 ∆PO — IFP (1) tw = 10µs Duty Cycle = 0.1% (2) DC Ta = 25˚C 10 ∆PO — Ta IF = 100mA IFP (mA) Relative radiant power ∆PO 10 2 (1) 10 Pulse forward current 10 2 Relative radiant power ∆PO 10 3 1 10 1 (2) 1 tw = 10µs Duty Cycle = 0.1% Ta = 25˚C 3 4 5 10 –1 10 –1 0 1 2 10 –2 1 10 10 2 10 3 10 4 10 –1 – 40 0 40 80 Forward voltage VF (V) Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Spectral characteristics 100 IF = 100mA Ta = 25˚C Directivity characteristics 0˚ 100 LN51F 90 80 70 10˚ 20˚ Ta = 25˚C 10 2 Frequency characteristics Ta = 25˚C Relative radiant intensity (%) 80 Relative radiant intensity(%) 30˚ 10 60 60 LN51L 50 40 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ Modulation output 1 40 30 20 10 –1 20 0 800 850 900 950 1000 1050 1100 10 –2 10 10 2 10 3 10 4 Wavelength λ (nm) Frequency f (kHz) 2