LN66

Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 100 1.5 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO * Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 5 1.0 typ 8 950 50 1.3 35 25 max Unit mW nm nm λP ∆λ VF IR Ct θ 1.6 10 V µA pF deg. * PO Classifications Class PO (mW) R 5 to 8 S >7 1 Infrared Light Emitting Diodes LN66 IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 120 IF — VF Ta = 25˚C 100 IF (mA) IFP (A) 100 IF (mA) Forward current 10 –1 1 10 10 2 10 Allowable forward current 80 80 Pulse forward current 1 60 60 10 –1 40 40 20 10 –2 20 0 – 25 0 20 40 60 80 100 10 –3 10 –2 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆PO — IFP 10 3 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.6 VF — Ta 10 ∆PO — Ta IF = 50mA VF (V) 10 2 (1) 10 1.2 50mA 10mA Relative radiant power ∆PO Relative radiant rower ∆PO IF = 100mA 1 Forward voltage 0.8 1 (2) 10 –1 0.4 10 –1 10 –2 1 10 10 2 10 3 10 4 0 – 40 0 40 80 120 10 –2 – 40 0 40 80 120 Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25˚C Directivity characteristics 0˚ 100 90 10˚ 20˚ Peak emission wavelength λP (nm) Relative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) 30˚ 960 60 60 50 40 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 940 40 30 20 20 920 900 – 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2 LN66 Infrared Light Emitting Diodes Frequency characteristics 10 Ta = 25˚C 1 Modulation output 10 –1 10 –2 10 –3 10 10 2 10 3 10 4 Frequency f (kHz) 3