LN66L

Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.6±0.15 2.54 For optical control systems Features High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2 ø5.0±0.2 Good radiant power output linearity with respect to input current Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 100 1.5 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO * Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 5 typ 8 950 50 1.3 35 25 max 0.6±0.15 Unit mW nm nm λP ∆λ VF IR Ct θ 1.6 10 V µA pF deg. * PO Classifications Class PO (mW) R 5 to 8 S >7 1 LN66L Infrared Light Emitting Diodes IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 120 IF — VF Ta = 25˚C 100 IF (mA) IFP (A) 100 IF (mA) Forward current 10 –1 1 10 10 2 10 Allowable forward current 80 80 Pulse forward current 1 60 60 10 –1 40 40 20 10 –2 20 0 – 25 0 20 40 60 80 100 10 –3 10 –2 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆PO — IFP 10 3 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.6 VF — Ta 10 ∆PO — Ta IF = 50mA ∆PO VF (V) 10 2 (1) 10 1.2 50mA 10mA ∆PO Relative radiant power 1 10 –1 10 –2 – 40 IF = 100mA Relative radiant rower Forward voltage 10 3 10 4 0.8 1 (2) 0.4 10 –1 10 –2 1 10 10 2 0 – 40 0 40 80 120 0 40 80 120 Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25˚C Directivity characteristics 0˚ 100 90 10˚ 20˚ Relative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) λP (nm) 30˚ Peak emission wavelength 960 60 60 50 40 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 940 40 30 20 20 920 900 – 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2 Infrared Light Emitting Diodes LN66L Frequency characteristics 10 Ta = 25˚C 1 Modulation output 10 –1 10 –2 10 –3 10 10 2 10 3 10 4 Frequency f (kHz) 3