LN671

Infrared Light Emitting Diodes LN671 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems 4 5.3 max. 5.0±0.1 2.54±0.1 3 1.0±0.1 Unit : mm 1.8±0.3 0.8±0.2 Features High-power output, high-efficiency : PO = 10 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 30 ns(typ.) Small plastic package Epin ø3.2 13.5±0.1 4.0±0.1 1.0±0.3 1.0±0.3 4-0.6 +0.1 –0.2 1.0±0.1 4.3 max. 0.2 +0.1 –0.05 4-0.5±0.15 1 10˚ 2 10˚ Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 5˚ Symbol PD IF IFP * Ratings 130 70 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 5˚ 1: Anode 2: Common Cathode 3: NC 4: Common Cathode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Rise time Fall time Half-power angle Symbol PO λP ∆λ VF IR tr tf θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V IFP = 50mA IFP = 50mA The angle in which radiant intencity is 50% min 6 typ 10 880 50 1.4 30 30 50 max 10˚ 10˚ Unit mW nm nm 1.8 10 V µA ns ns deg. 1 LN671 Infrared Light Emitting Diodes IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 3 IFP — VFP tw = 10µs f = 100Hz Ta = 25˚C IF (mA) 10 IFP (mA) Pulse forward current 10 –1 1 10 10 2 IFP (A) 100 10 2 Allowable forward current 80 Pulse forward current 1 10 60 10 –1 1 40 20 10 –2 10 –1 0 – 25 0 20 40 60 80 100 10 –3 10 –2 10 –2 0 1 2 3 4 5 Ambient temperature Ta (˚C ) Duty cycle (%) Pulse forward voltage VFP (V) ∆PO — IFP 10 3 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 2.2 VF — Ta 10 IF = 50mA ∆PO — Ta IF = 50mA Relative radiant power ∆PO Forward voltage 10 (1) VF (V) 10 2 1.8 1.4 Relative radiant power ∆PO 0 40 80 120 1 1 (2) 1.0 10 –1 10 –2 1 10 10 2 10 3 10 4 0.6 – 40 10 –1 – 40 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 920 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25˚C Directivity characteristics 0˚ 100 10˚ 20˚ Peak emission wavelength λP (nm) Relative radiant intensity (%) Relative radiant intensity (%) 900 80 90 80 30˚ 880 60 70 60 50 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 860 40 40 30 840 20 20 820 – 40 0 40 80 120 0 750 800 850 900 950 1000 1050 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2