LN77L

Infrared Light Emitting Diodes LN77L GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 18 mW (typ.) Fast response and high-speed modulation capability : fC = 20 MHz (typ.) Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package 1.0 7.65±0.2 ø5.0±0.2 25.6±1.0 5.05±0.3 1.5 (2.0) 2-0.8 max. 2-0.6±0.15 2.54 0.6±0.15 1 2 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 190 100 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C tw = 10 µs, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Half-power angle Cutoff frequency * Symbol PO λP ∆λ VF IR θ fC* Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V The angle in which radiant intencity is 50% min 10 ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) typ 18 860 40 1.6 20 20 max Not soldered 2.0 max. Unit mW nm nm 1.9 10 V µA deg. MHz IFP = 50mA + 10mAp-p Frequency when modulation optical power decreases by 3dB from 1MHz ( PO(fCMHz) 10 log =–3 P O (1MHz) ) 1 LN77L Infrared Light Emitting Diodes IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 4 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IFP (mA) Pulse forward current 1 10 10 2 IFP (A) 100 10 3 10 Allowable forward current 80 Pulse forward current 10 2 60 1 10 40 10 –1 20 1 0 – 25 0 20 40 60 80 100 10 –2 10 –1 10 –1 0 1 2 3 4 5 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆PO — IFP 10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 2.2 VF — Ta 10 ∆PO — Ta IF = 50mA Relative radiant power ∆PO VF (V) 10 1.8 IF = 100mA 50mA Forward voltage (2) 1 1.4 Relative radiant power ∆PO 120 (1) 1 10 –1 1.0 10 –2 1 10 10 2 10 3 0.6 – 40 0 40 80 10 –1 – 40 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 920 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25˚C Directivity characteristics 0˚ 100 10˚ 20˚ Peak emission wavelength λP (nm) Relative radiant Intensity (%) 900 80 80 70 Relative radiant intensity (%) 90 30˚ 880 60 60 50 40 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 860 40 30 20 840 20 820 – 40 0 40 80 120 0 750 800 850 900 950 1000 1050 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2