Infrared Light Emitting Diodes
LNA2801L
GaAlAs on GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 2 (1.5) 1 2.54 1.6
For optical control systems
5.5±0.2 1.0 15.5±1.0 1.0 4.5±0.3
ø3.6±0.2 ø3.0±0.2
Features
High-power output, high-efficiency : Ie = 6 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current ø3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 75 50 1 3 –25 to +85 – 40 to +100
Unit mW mA A V ˚C ˚C
1: Anode 2: Cathode
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Center radiant intensity Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol Ie λP ∆λ VF IR Ct θ Conditions IF = 20mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min 6
typ 940 50 1.3 35 15
max
Unit mW/sr nm nm
1.5 10
V µA pF deg.
1
LNA2801L
Infrared Light Emitting Diodes
IF — Ta
60 10 2
IFP — Duty cycle
tw = 10µs Ta = 25˚C 80 70
IF — VF
Ta = 25˚C
IF (mA)
IFP (A)
50
10
IF (mA) Forward current
1 10 10 2
60 50 40 30 20 10
Allowable forward current
40
Pulse forward current
30
1
20
10 –1
10
0 – 25
0
20
40
60
80
100
10 –2 10 –1
0
0
0.4
0.8
1.2
1.6
Ambient temperature Ta (˚C )
Duty cycle (%)
Forward voltage VF (V)
∆Ie — IFP
10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.6
VF — Ta
10 3
∆Ie — Ta
IF = 50mA
Relative radiant intensity ∆Ie
VF (V)
10
(1)
1.2 10mA 1mA
1
(2)
0.8
Relative radiant intensity ∆Ie
120
IF = 50mA
Forward voltage
10 2
10 –1
0.4
10 –2 10 –3
10 –2
10 –1
1
0 – 40
0
40
80
10
– 20
0
20
40
60
80
Pulse forward current IFP (A)
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
λP — Ta
1000 IF = 50mA 100
Spectral characteristics
IF = 50mA Ta = 25˚C
Directional characteristics
0˚ 100 10˚ 20˚
Peak emission wavelength λP (nm)
Relative radiant intensity (%)
980
80
80 70
Relative radiant intensity (%)
90
30˚
960
60
60 50 40
40˚ 50˚ 60˚ 70˚ 80˚ 90˚
940
40
30 20
920
20
900 – 40
0
40
80
120
0 860
900
940
980
1020 1060 1100
Ambient temperature Ta (˚C )
Wavelength λ (nm)
2
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