LNA2901L

Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.6±0.15 2.54 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 7.65±0.2 1.0 ø5.0±0.2 Transparent epoxy resin package Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 50 1 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Cathode 2: Anode f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Center radiant intensity Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Pulse forward voltage Reverse current (DC) Capacitance between terminals Half-power angle * Symbol Ie PO λP ∆λ VF VFP* IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA IF = 50mA IFP = 1A VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 9 typ 12 950 50 1.3 0.6±0.15 max Unit mW/sr mW nm nm 1.5 3 10 V V µA pF deg. 35 20 f = 100 Hz, Duty cycle = 0.1 % 1 LNA2901L Infrared Light Emitting Diodes IF — Ta 60 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 80 70 IF — VF Ta = 25˚C IF (mA) IFP (A) 50 IF (mA) Forward current 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 30 1 20 10 –1 10 0 – 25 0 20 40 60 80 100 10 –2 10 –1 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆Ie — IFP 10 2 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C (1) 1.6 VF — Ta 10 3 ∆Ie — Ta IF = 50mA IF = 50mA Relative radiant intensity ∆Ie VF (V) 10 1.2 10mA 1mA Relative radiant intensity ∆Ie 120 10 2 1 (2) Forward voltage 0.8 10 10 –1 0.4 10 –2 10 –3 10 –2 10 –1 1 0 – 40 0 40 80 1 – 40 0 40 80 120 Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25˚C Directivity characteristics 0˚ 100 90 10˚ 20˚ Peak emission wavelength λP (nm) Relative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) 30˚ 960 60 60 50 40 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 940 40 30 20 20 920 900 – 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2