LNA2904L

Infrared Light Emitting Diodes LNA2904L GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : Ie = 10 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.9±0.3 1.0 7.65±0.2 ø5.0±0.2 Not soldered 2-1.0±0.15 2-0.6±0.15 2.54 0.6±0.15 2 1 1: Cathode 2: Anode ø6.0±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 100 1.5 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Center radiant intensity Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol Ie λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 10 1.0 typ 950 50 1.35 50 20 max Unit mW/sr nm nm 1.6 10 V µA pF deg. 1 LN2904L Infrared Light Emitting Diodes IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IFP (A) 10 Allowable forward current 80 IFP (A) Pulse forward current 10 –1 1 10 10 2 100 1 Pulse forward current 1 60 10 –1 40 10 –1 20 10 –2 0 – 25 0 20 40 60 80 100 10 –3 10 –2 10 –2 0 1 2 3 4 5 Ambient temperature Ta (˚C ) Duty cycle (%) Forward voltage VF (V) ∆Ie — IFP 10 3 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1.6 VF — Ta 10 IF = 100mA ∆Ie — Ta IF = 50mA Relative radiant intensity ∆Ie VF (V) 10 2 (1) 10 1.2 50mA 10mA 0.8 Relative radiant intensity ∆Ie Forward voltage 1 1 (2) 0.4 10 –1 10 –2 1 10 10 2 10 3 10 4 0 – 40 0 40 80 120 10 –1 – 40 0 40 80 120 Pulse forward current IFP (mA) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) λP — Ta 1000 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25˚C Directivity characteristics 0˚ 100 90 10˚ 20˚ Peak emission wavelength λP (nm) Relative radiant intensity (%) 980 80 80 70 Relative radiant intensity (%) 30˚ 960 60 60 50 40 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 940 40 30 20 920 20 900 – 40 0 40 80 120 0 860 900 940 980 1020 1060 1100 Ambient temperature Ta (˚C ) Wavelength λ (nm) 2