Semiconductor Laser
LNC701PS
GaAlAs Semiconductor Laser
ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 ø1.0 min. Y 0.4±0.1 110˚±1˚
Unit : mm
2
Features
Low threshold current Stable single horizontal mode oscillation Long lifetime, high reliability
X
LD 3
PD
1 Junction plane
1.0±0.1 2.3±0.2 1.27 0.25 Z
Reference slot Kovar glass LD pellet Reference plane ø1.2 max. 3-ø0.45 2
Applications
Optical data processing devices Optical disk memory drive Optical measuring equipment
1.2±0.1 6.5±0.5 0.5 max.
1 ø2.0
3 1: LD anode 2: Common case 3: PD cathode
Bottom view
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 35 2 30 100 –10 to +60 – 40 to +80 Unit mW V V mW ˚C ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle
Horizontal direction*1 Vertical direction*1
Symbol Ith IOP VOP λL θ// θ⊥ η IP IR θX θY CW
Conditions CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 30mW CW PO = 3 - 30mW CW PO = 30mW, VR (PIN) = 5V VR (PIN) = 15V CW PO = 30mW CW PO = 30mW
min 10 30 780 8.5 23 0.8
typ 20 55 2.0 785 10 25 1.0 0.3
max 30 70 2.5 790 11.5 28 1.2
Unit mA mA V nm deg. deg. mA
Differential efficiency PIN photo current Reverse current (DC) Optical axis accuracy
*1
0.1 –2.0 –3.0 +2.0 +3.0
µA deg. deg.
X direction Y direction
The radiation angle is indicated as the full angle at half maximum.
1
Semiconductor Laser
LNC701PS
PO — IOP
60 200 Ta = 25˚C 50
I—V
100
Far field pattern
Radiant power PO (mW)
100
I (mA)
40
Relative radiant power
∆PO
80
60
θ//
θ⊥
30
0
Current
40
20
–100 10
20
0
0
40
80
120
–200 –4
–2
0
2
4
0 40
20
0
20
40
Operating current IOP (mA)
Voltage V (V)
Angle θ (deg.)
Ith — Ta
10 2 10 3
IOP — Ta
400 PO = 30mW
IP — Ta
VR (PIN) = 5V PO = 30mW
IOP (mA)
Ith (mA)
IP (µA) PIN photo current
10 30 50 70 10 2 10 – 10
300
Threshold current
Operating current
10
200
100
1 – 10
10
30
50
70
0 –10
10
30
50
70
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
PO — Ta
60 10 2
Id — Ta
VR (PIN) = 30V
50
10
40
PIN dark current Id (nA)
10 30 50 70
Radiant power PO (mW)
1
30
10 –1
20
10
10 –2
0 – 10
10 –3 – 10
10
30
50
70
Ambient temperature Ta (˚C )
Ambient temperature Ta (˚C )
2
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