LNC702PS

Semiconductor Laser LNC702PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 ø1.0 min. Unit : mm 2 Low threshold current Stable single horizontal mode oscillation Low drooping 0.4±0.1 110˚±1˚ Features LD 1 Junction plane 1.0±0.1 Reference plane Reference slot 3 PD 2.3±0.2 1.27±0.07 0.25 Applications Optical data processing devices Laser beam printers 1.2±0.1 Reference plane 3-ø0.45 6.5±0.5 2 1 ø2.0 Bottom view 3 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 5 2 30 60 –10 to +60 – 40 to +85 Unit mW V V mW ˚C ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Horizontal direction Vertical direction Symbol Ith IOP VOP λL*2 θ//*1 θ⊥*1 IP IR θX θY CW Conditions CW PO = 5mW CW PO = 5mW CW PO = 5mW CW PO = 5mW CW PO = 5mW CW PO = 5mW, VR (PIN) = 5V VR (PIN) = 15V CW PO = 5mW CW PO = 5mW min 15 20 780 8 20 0.3 –2.0 –3.0 typ 25 35 1.9 795 12 33 0.8 max 40 50 2.5 810 15 45 1.6 0.1 +2.0 +3.0 Unit mA mA V nm deg. deg. mA µA deg. deg. PIN photo current Reverse current (DC) Optical axis accuracy *1 The *2 Sampling X direction Y direction radiation angle is indicated as half full angle. inspections are to be performed. On each wafer, n = 10 samplings are to be performed, with an evaluation criterion of zero rejects. 1 Semiconductor Laser LNC702PS PO — IOP 6 200 Ta = 25˚C 5 I—V 100 Far field pattern PO (mW) 100 I (mA) 4 Relative radiant power ∆PO 80 60 θ// θ⊥ Radiant power 3 0 Current 40 2 –100 1 20 0 0 20 40 60 –200 –4 –2 0 2 4 0 40 20 0 20 40 Operating current IOP (mA) Voltage V (V) Angle θ (deg.) Ith — Ta 10 2 10 3 IOP — Ta 900 PO = 5mW IP — Ta VR (PIN) = 5V PO = 5mW IOP (mA) Ith (mA) IP (µA) PIN photo current 10 30 50 70 10 2 10 – 10 800 Threshold current Operating current 10 700 600 1 – 10 10 30 50 70 500 –10 10 30 50 70 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) PO — Ta 10 10 2 Id — Ta VR (PIN) = 15V 8 10 PO (mW) PIN dark current Id (nA) 6 1 Radiant power 4 10 –1 2 10 –2 0 – 10 10 30 50 70 10 –3 – 10 10 30 50 70 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) 2