LNC704PS

Semiconductor Laser LNC704PS GaAlAs Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 ø1.0 min. Unit : mm 2 Low threshold current Stable single horizontal mode oscillation Long lifetime, high reliability 0.4±0.1 110˚±1˚ Features LD 1 Junction plane 1.0±0.1 Reference plane Reference slot 3 PD 2.3±0.2 1.27±0.07 0.25 Applications Optical data processing devices Optical disk memory Optical measuring equipment 1.2±0.1 Reference plane 3-ø0.45 6.5±0.5 2 1 ø2.0 Bottom view 3 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 40 2 30 100 –10 to +60 – 40 to +80 Unit mW V V mW ˚C ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Horizontal direction Vertical direction Symbol Ith IOP VOP λL θ//*1 θ⊥*1 η IP IR θX θY CW Conditions CW PO = 32mW CW PO = 32mW CW PO = 32mW CW PO = 32mW CW PO = 32mW CW PO = 29mW/I(32mW – 3mW) CW PO = 32mW, VR (PIN) = 5V VR (PIN) = 15V CW PO = 32mW CW PO = 32mW min 10 30 770 7 20 0.7 typ 20 70 2.0 785 9 25 0.9 0.4 max 35 90 2.5 805 13 30 1.2 0.1 Unit mA mA V nm deg. deg. W/A mA µA deg. deg. Differential efficiency PIN photo current Reverse current (DC) Optical axis accuracy *1 The X direction Y direction –2.0 –3.0 +2.0 +3.0 radiation angle is indicated as half full angle. 1 Semiconductor Laser LNC704PS PO — IOP 60 200 Ta = 25˚C 50 I—V 100 Far field pattern PO (mW) 100 I (mA) 40 Relative radiant power ∆PO 80 60 θ// θ⊥ Radiant power 30 0 Current 40 20 –100 10 20 0 0 40 80 120 –200 –4 –2 0 2 4 0 40 20 0 20 40 Operating current IOP (mA) Voltage V (V) Angle θ (deg.) Ith — Ta 10 2 10 3 IOP — Ta 600 PO = 32mW IP — Ta VR (PIN) = 5V PO = 32mW IOP (mA) Ith (mA) IP (µA) PIN photo current 10 30 50 70 10 2 10 – 10 500 Threshold current Operating current 10 400 300 1 – 10 10 30 50 70 200 –10 10 30 50 70 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) PO — Ta 60 10 2 Id — Ta VR (PIN) = 15V 50 10 PO (mW) 40 PIN dark current Id (nA) 10 30 50 70 1 Radiant power 30 10 –1 20 10 10 –2 0 – 10 10 –3 – 10 10 30 50 70 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) 2