LNC707PS

Semiconductor Laser LNC707PS High Power Output Semiconductor Laser Overview T he LNC707PS is a near infrared GaAlAs laser diode which provides continuous oscillation in single mode and is stable at low operating current. LNC707PS uses a small package, and is capable of operating continuously at high temperatures with high output (60 mW). It can be used in a wide range of applications as a light source for optical disk memory and optical information devices. In particular, it can be used in making equipment portable due to its low current operations. ø1.0 min. ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 0.4±0.1 110˚±1˚ LD 1 Junction plane 1.0±0.1 Reference plane Reference slot Kovar glass LD pellet Reference plane ø1.2max. 3-ø0.45 2 1 3 3 PD High power output : 60 mW Stable single horizontal mode oscillation Small size package 6.5±0.5 Low current operations : 70 mA (with 60 mW output) 0.5 max. Features 1.2±0.1 2.3±0.2 1.27 0.25 ø2.0 Bottom view 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 60 2 30 100 –10 to +60 – 40 to +80 Unit mW V V mW ˚C ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Horizontal direction Vertical direction Symbol Ith IOP VOP λL θ//* θ ⊥* η IR IP θX θY CW Conditions PO = 60mW PO = 60mW PO = 60mW PO = 60mW PO = 60mW PO = 55mW/I(60mW – 5mW) VR (PIN) = 5V PO = 60mW, VR (PIN) = 5V PO = 60mW PO = 50mW min 15 70 778 7 17 0.7 typ 25 100 2.0 784 10 21 0.9 0.2 max 35 130 2.5 790 13 25 1.2 0.1 Unit mA mA V nm deg. deg. mW/mA µA mA deg. deg. Differential efficiency Reverse current (DC) PIN photo current Optical axis accuracy Oscillation mode * X direction Y direction –2.0 –3.0 +2.0 +3.0 Single horizontal mode θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle ) 1 Semiconductor Laser LNC707PS PO — IOP 60 200 Ta = 25˚C 50 I—V 100 Far field pattern 80 100 I (mA) 40 Relative radiant power ∆PO PO (mW) 60 θ// θ⊥ Radiant power 30 0 Current 40 20 –100 10 20 0 0 40 80 120 –200 –4 –2 0 2 4 0 40 20 0 20 40 Operating current IOP (mA) Voltage V (V) Angle θ (deg.) Ith — Ta 10 2 10 3 IOP — Ta PO = 60mW 400 IP — Ta VR (PIN) = 5V PO = 60mW IOP (mA) Ith (mA) IP (µA) PIN photo current 10 30 50 70 10 2 10 – 10 300 Threshold current Operating current 10 200 100 1 – 10 10 30 50 70 0 –10 10 30 50 70 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) PO — Ta 100 10 2 Id — Ta VR (PIN) = 30V 80 10 PO (mW) Id (nA) PIN dark current 60 1 Radiant power 40 10 –1 20 10 –2 0 – 10 10 30 50 70 10 –3 – 10 10 30 50 70 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) 2