LNC801PS

Semiconductor Laser LNC801PS High Power Output Semiconductor Laser Overview The LNC801PS is a GaAlAs laser diode which provides stable, continuous, single mode oscillation of near infrared light at room temperature. This product can be used in a wide range of light source applications, including laser printers, facsimiles, optical disk memory, and optical information devices. ø1.0 min. ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Unit : mm 2 0.4±0.1 110˚±1˚ LD 1 Junction plane 1.0±0.1 Reference plane Reference slot Kovar glass LD pellet Reference plane ø1.2max. 3-ø0.45 2 1 3 3 PD Features Low threshold oscillation Stable single horizontal mode oscillation Built-in PIN photodiode for light output monitors Light output is continuously variable as far as 60 mW Supports direct modulation Near infrared oscillating wavelength Long lifetime, high reliability 1.2±0.1 6.5±0.5 0.5 max. 2.3±0.2 1.27 0.25 ø2.0 Bottom view 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 60 1.5 30 100 –10 to +60 – 40 to +80 Unit mW V V mW ˚C ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Horizontal direction Vertical direction Symbol Ith IOP VOP λL θ//* θ ⊥* η IR IP θX θY CW Conditions PO = 50mW PO = 50mW PO = 50mW PO = 50mW PO = 50mW CW PO = 36mW/I(40mW – 4mW) VR (PIN) = 5V PO = 50mW, VR (PIN) = 5V PO = 50mW PO = 50mW min 10 50 815 7 18 0.6 typ 30 70 2.0 830 10 25 1.0 max 50 120 3.0 845 13 28 1.5 0.1 Unit mA mA V nm deg. deg. mW/mA µA mA deg. deg. Differential efficiency Reverse current (DC) PIN photo current Optical axis accuracy Oscillation mode * X direction Y direction –2.0 –3.0 +2.0 +3.0 Single horizontal mode θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle ) 1 Semiconductor Laser LNC801PS PO — IOP 60 200 Ta = 25˚C 50 I—V 100 Far field pattern PO (mW) 100 Relative radiant power ∆PO 80 θ⊥ 60 θ// Radiant power 30 I (mA) 0 40 Current 40 20 –100 10 20 0 0 40 80 120 –200 –4 –2 0 2 4 0 40 20 0 20 40 Operating current IOP (mA) Voltage V (V) Angle θ (deg.) Ith — Ta 10 2 10 3 IOP — Ta PO = 50mW 100 PO — Ta IOP (mA) Ith (mA) 80 PO (mW) 10 2 60 Threshold current Operating current 10 Radiant power 10 30 50 70 40 20 1 – 10 10 30 50 70 10 – 10 0 – 10 10 30 50 70 Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Ambient temperature Ta (˚C ) Id — Ta 10 2 VR (PIN) = 30V 10 Id (nA) PIN dark current 1 10 –1 10 –2 10 –3 – 10 10 30 50 70 Ambient temperature Ta (˚C ) 2