Zener Diodes Composite Elements
MA111
MAZL068D
Silicon planer type
Constant voltage, constant current, waveform cripper and surge absorption circuit s Features
2.9 -0.05
Unit : mm
2.8 -0.3 0.65±0.15 5
+0.2 +0.25
1.5 -0.05
0.65±0.15 1
0.95
q Mini q Four
type package (5-pin) anode-common element wiring of MA8068
1.9±0.1
+0.2
4
0.95
3
2
0.3 -0.05
0.4±0.2
+0.1 0.16 -0.06
1.1 -0.1
+0.2
0.8
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Average forward current Instanious forward current Total power dissipation Junction temperature Storage temperature
Working value in a single piece *2 With a printed-circuit board *1
Symbol IF(AV) IFRM Ptot*2 Tj Tstg
Rating 100 200 *1 *1
Unit mA mA mW ˚C ˚C
5 4 3
1 : Cathode 1 4 : Anode 1, 2 2 : Cathode 2 Anode 3, 4 3 : Cathode 3 5 : Cathode 4 Mini Type Package (5-pin)
200 *1 150 – 55 to + 150
s Internal Connection
1 2
1 s Electrical Characteristics (Ta= 25˚C)* Parameter Forward voltage Zener voltage Operating resistance Reverse current Temperature coefficient of zener voltage Terminal capacitance Symbol VF VZ RZ IR SZ *3 Ct *2 RZK IF=10mA IZ= 5mA IZ= 0.5mA IZ= 5mA VR= 4V IZ= 5mA VR= 0V, f=1MHz 3.0 40 6.40 Condition min typ 0.9 6.80 max 1.0 7.20 60 20 0.1 Unit V V Ω Ω µA mV/˚C pF
Note 1. Test method : Depend on JIS C7031 testing 2. Rated input/output frequency : 5MHz 3. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation. * 2 : Guaranteeed at 20ms after power application * 3 : Tj= 25 to 150˚C
s Marking
6.8D
0 to 0.1
0.1 to 0.3
+0.1
1.45±0.1
Zener Diodes Composite Elements
MAZL068D
Ptot – Ta
300 With a printed-circuit board 250
IF – VF
1000 100 Ta=25˚C
IZ – VZ
25˚C 100˚C
Ptot (mW)
100
100˚C 25˚C Ta=150˚C –20˚C
IZ (mA)
10
Ta=–20˚C
150˚C
200
(mA)
10
1
Power dissipation
Forward current
IF
150
1
Zener current
0.1
100
50
0.1
0.01
0 0 50 100 150 Ta 200 (˚C) 250 Ambient temperature
0.01 0 0.2 0.4 0.6 0.8 VF 1.0 (V) 1.2 Forward voltage
0.001 6 7 Zener voltage VZ (V) 8
RZ – IZ
1000 Ta=25˚C 30
Ct – VR
100 f=1MHz Ta=25˚C
(pF)
IR – VR
(Ω)
RZ
CD
100
20
(nA)
10
Operating resistance
Ta=150˚C 1 100˚C
Diode capacitance
10
10
Reverse current
IR
0.1
25˚C
1 0.3 0.5
1
3
5 IZ
10 (mA)
30 50
0 0 1 2 3 4 VR 5 (V) 6 Reverse voltage
0.01 0 1 2 3 4 VR 5 (V) 6 Reverse voltage
Zener current
Noise – IZ
100 50 Ta=25˚C
Noise (nV/ Hz)
10 5
1 0.5
0.1 0.1
0.5
1
5
10
Zener current IZ (mA)
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