MN3611RE

CCD Linear Image Sensor MN3611RE Color CCD Linear Image Sensor with 720 Pixels each for R, G, and B Colors s Overview The MN3611RE is a high responsivity CCD color linear image sensor having low dark output floating photodiodes in the photodetector region, CCD analog shift registers for read out, and 720 pixels each for the primary colors R, G, and B. It can read a B6 size color document with a high quality and a resolution of 170dpi. s Pin Assignments 1 OS DS VDD øR NC ø1 NC NC NC NC NC 1 2 3 4 5 6 7 8 9 10 11 2160 (Top View) WDIP022-G-0470 22 21 20 19 18 17 16 15 14 13 12 VSS ø SG NC ø2 NC NC NC NC NC NC NC s Features • 2160 (720 × R.G.B) floating photodiodes and an n-channel buried type CCD shift registers are built in a single chip. • It is possible to read a B6 size color document with a high quality and a resolution of 170dpi. • RGB primary colors type on chip color filters are used for color separation. • Very high responsivity is obtained because voltage amplifier circuits are built in the chip. • Use of photodiodes with a new structure has made the dark output voltage very low. • Large signal output of typically 2V at saturation can be obtained. C20 s Application • Reading out color images in a color scanner. s Block Diagram VSS 22 øSG 21 ø2 19 2 Signal output amplifier 1 Compensation output amplifier Clock driver 1 2 3 4 1 21 21 2 B1 B2 B3 2 1 21 21 21 2 1 B 51 B 52 D1 D2 D3 1 2 3 4 5 1 21 2 1 21 2 1 21 2157 2158 2159 2160 D4 D5 D6 2 12121 1 21 21 21 21 2 21 21 21 21 21 2 B1 to B52 : Black reference pixels D1 to D6 : Dummy invalid pixels 6 OS DS VDD ø R ø1 CCD Linear Image Sensor s Absolute Maximum Ratings (Ta=25˚C, VSS=0V) Parameter Power supply voltage Input voltage Output voltage Operating temperature range Storage temperature range Symbol VDD VI VO Topr Tstg Rating – 0.3 to +15 – 0.3 to +15 – 0.3 to +15 –2 5 to + 60 –4 0 to +100 MN3611RE Unit V V V ˚C ˚C s Operating Conditions • Voltage conditions (Ta=–25 to +60˚C, VSS=0V) Parameter Power supply voltage CCD shift register clock High level CCD shift register clock Low level Shift gate clock High level Shift gate clock Low level Reset gate clock High level Reset gate clock Low level Symbol VDD Vø H Vø L VSH VSL VRH VRL Condition min 11.4 4.5 0 4.5 0 4.5 0 typ 12.0 5.0 0.2 5.0 0.2 5.0 0.2 max 13.0 5.5 0.5 5.5 0.5 5.5 0.5 Unit V V V V V V V • Timing conditions (Ta=–25 to +60˚C) Parameter Shift register clock frequency Reset clock frequency (=data rate) Shift register clock rise time Shift regisster clock fall time Shift clock (øSG) rise time Shift clock (øSG) fall time Shift clock set up time Shift clock pulse width Shift clock hold time Reset clock rise time Reset clock fall time Reset clock pulse width Reset clock hold time Symbol fC fR t Cr t Cf t Sr t Sf t Ss t Sw t Sh t Rr t Rf t Rw t Rh See input/output timing diagram. See drive timing diagram. See input/output timing diagram. See drive timing diagram. Condition See drive timing diagram. fC=1/2T See drive timing diagram. fR=1/T See input/output timing diagram. See drive timing diagram. min — — 0 0 0 0 0 200 0 0 0 60 100 typ 0.5 1.0 60 60 50 50 100 1000 100 15 15 250 125 max 1.0 2.0 100 100 100 100 — — — 30 30 — — Unit MHz MHz ns ns ns ns ns ns ns ns ns ns ns s Electrical Characteristics • Clock input capacitance (Ta=–25 to +60˚C) Parameter Shift register clock input capacitance Reset clock input capacitance Shift clock input capacitance Symbol Cø1 ,C ø2 CøR CøSG f reg =1MHz f reg =1MHz f reg =1MHz Condition min — — — typ 350 15 130 max 400 30 200 Unit pF pF pF • DC characteristics Parameter Power supply current Symbol I DD VDD =+12V Condition min — typ 8 max 15 Unit mA MN3611RE • AC characteristics Parameter Signal output delay time Symbol tos Condition CCD Linear Image Sensor min — typ 100 max — Unit ns s Optical Characteristics • Ta=25˚C, VDD=12V, VøH=VSH=VRH=5V (pulse), fC=0.5MHz, fR=1MHz, Tint (accumulation time)=10ms • Light source: Daylight type fluorescent lamp with IR/UV cutting filter • Optical system: A slit with an aperture dimensions of 20mm × 20mm is used at a distance of 200mm from the sensor (equivalent to F=10). • Load resistance = 100k Ohms • These specifications apply to the 2160 valid pixels excluding the dummy pixels D1 to D6. Parameter red Responsivity green blue Photo response non-uniformity Odd/even bit non-uniformity Saturation output voltage Saturation exposure Dark signal output voltage Dark signal output non-uniformity Shift register total transfer efficiency Output impedance Dynamic range Signal output pin DC level Compensation output pin DC level Symbol RR RG RB PRNU O/E VSAT SE VDRK DSNU STTE ZO DR VOS V DS Note 5 Note 5 Note 6 Note 6 Note 1 Note 2 Note 3 Note 3 Note 4 Note 4 — — 92 — — 3.5 3.5 — Condition min 4.5 10.0 6.5 — — 1.5 typ 7.2 13.5 9.6 — — 2.0 0.13 0.8 0.2 99 — 2,500 4.5 4.5 50 max 9.9 17.0 12.7 15 3 — — 2.0 3.0 — 1 — 6.0 6.0 100 % % V lx·s mV mV % kΩ V V mV V/lx· s Unit Signal and compensation output pin DC level difference |V –V DS | OS Note 1) The photo response non-uniformity (PRNU) for each color is defined by the following equation, where Xave is the average output voltage of the 720 valid pixels and ∆x is the absolute value of the difference between Xave and the voltage of the maximum (or minimum) output pixel, when the surface of the photo-sites is illuminated with light having a uniform distribution over the entire surface. x ×100 (%) PRNU= Xave The incident light intensity shall be 50% of the standard saturation light intensity. Note 2) The odd/even bit non-uniformity (O/E) for each color is defined by the following equation, where Xave is the average output voltage of the 720 valid pixels for each color and Xn is the output voltage of the ‘n’th pixel for each color, when the surface of the photo-sites is illuminated with light having a uniform distribution over the entire surface. ∑ | Xn–Xn+1 | n=1 ×100 (%) 719 × X ave The incident light intensity shall be 50% of the standard saturation light intensity. Note 3) The Saturation output voltage (VSAT) is defined as the output voltage at the point when the linearity of the photoelectric characteristics cannot be maintained as the incident light intensity is increased. [The light intensity of exposure at this point is called the saturation exposure (SE).] Note 4) The dark signal output voltage (VDRK) is defined as the average output voltage of the 2160 pixels in the dark condition at Ta=25˚C and Tint=10ms. Normally, the dark output voltage doubles for every 8 to 10˚C rise in Ta, and is proportional to Tint. The dark signal output non-uniformity (DSNU) is defined as the difference between the maximum output voltage among all the valid pixels and VDRK in the dark condition at Ta=25˚C and Tint=10ms. O/E= V DRK DSNU 719 CCD Linear Image Sensor s Optical Characteristics (continued) Note 5) The dynamic range (DR) is defined by the following equation. MN3611RE VSAT VDRK Since the dark signal voltage is proportional to the accumulation time, the dynamic range becomes wider when the accumulation time is shorter. Note 6) The signal output pin DC level (VOS) and the compensation output pin DC level (VDS) are the voltage values shown in the following figure. DR= OS VOS VSS VSS Reset feed through level DS VDS s Pin Descriptions Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Symbol OS DS VDD øR NC ø1 NC NC NC NC NC NC NC NC NC NC NC NC ø2 NC øSG VSS Signal output Compensation output Power supply Reset clock Non connection CCD Shift clock gate Non connection Non connection Non connection Non connection Non connection Non connection Non connection Non connection Non connection Non connection Non connection Non connection CCD Shift clock gate Non connection Shift clock gate Ground Pin name Condition Note) Connect all NC pins externally to VSS. MN3611RE s Construction of the Image Sensor The MN3611RE can be made up of the three sections of—a) photo detector region, b) CCD transfer region (shift register), and c) output region. a) Photo detector region • The photoelectric conversion device consists of an 11µm floating photodiode and a 3µm channel stopper for each pixel, and 2160 of these devices are linearly arranged side by side at a pitch of 14µm. • The photo detector's windows are 14µm × 14µm squares and light incident on areas other than these windows is optically shut out. • The photo detector is provided with 52 optically shielded pixels (black dummy pixels) which serve as the black reference. b) CCD Transfer region (shift register) • The light output that has been photoelectrically converted is CCD Linear Image Sensor transferred to the CCD transfer for each odd and even pixel at the timing of the shift clock (øSG). The optical signal electric charge transferred to this analog shift register is successively transferred out and guided to the output region. • A buried type CCD that can be driven by a two phase clock (ø1, ø2) is used for the analog shift register. c) Output region • The signal charge that is transferred to the output region is sent to the detector where impedance transformation is done using two source follower stages. • The DC level component and the clock noise component not containing optical signals are output from the DS pin. • By carrying out differential amplification of the two outputs OS and DS externally, it is possible to obtain an output signal with a high S/N ratio by reducing the clock noise, etc. s Timing Diagram (1) I/O timing Integration Time (Tint.) ø SG ø1 ø2 øR 1234 6 7 8 9 10 11 58 59 60 61 62 63 64 65 66 2222 2224 2226 2223 2225 DS OS 1234 6 7 8 B1 B2 B50 B51 B52 2159 2160D4 D5 D6 Note) Repeat the transfer pulses (cp) for more than 1114 periods. Blank feed (for 8 pixels) Black reference pixel signal (for 52 pixels) D1 D2 D3 R1 G1 B1 Valid pixel signal (for 2160 pixels) Invalid pixel signal (for 3 pixels) Invalid pixel signal (for 3 pixels) (2) Drive timing t Sr t Sf 90% øSG 10% 90% ø1 t Cr ø2 10% t Cf 90% 50% 10% t RS 90% 50% 10% t Rf T Reference level 90% Signal output voltage t Rh øR 90% t Rr t RW ø1 DS t Ss t SW t Sh OS t OS CCD Linear Image Sensor s Graphs and Characteristics Spectral Response Characteristics 100 Relative responsivity (%) 80 60 40 20 0 Blue Green Red MN3611RE 400 500 600 700 Wavelength (nm) 800