MN6311S

EEPROMs MN6311S 2K-Bit EEPROM Overview The MN6311S is a 2048-bit, bit sequential EEPROM with a built-in address counter. It sequentially increments the address with the clock input to produce serial output. It includes a built-in charge pump circuit and timer for automatically erasing, writing, and modifying data using only a single 3 volt power supply. To reduce write times, it includes a block write function for writing up to 32 bits at a time. This function makes it possible to rewrite the contents of all 2048 bits within 1 second (typ.). Pin Assignment DATA CE VCC GND 1 2 3 4 8 7 6 5 OE RST CLK PGM Features 2048 words × 1 bit organization Built-in reset function Tristate output Low power consumption · 3 volt read: 1.5 mW (max.) · 3 volt program: 6 mW (max.) · 3 volt standby: 60 µW (max.) Single 3 volt power supply (charge pump circuit built-in) Self timer for use in automatically erasing and writing data Built-in data polling function Write cycles: 105 times Data storage interval: 10 years (TOP VIEW) SOP008-P-0225 Applications Personal wireless equipment, cordless telephones, storage for recognition and adjustment data for terminals, etc. 1 MN6311S Block Diagram EEPROMs Data latch pump Row decoder Clock generator CLK 6 8-bit counter 64 × 16 cell matrix 3 VCC 4 RST 7 GND Column decoder CE 2 OE 8 PGM 5 VPP generator Timer Control logic Column gate Data I/O buffer 1 2 DATA EEPROMs Pin Descriptions Pin No. 1 2 3 4 5 6 7 8 Symbol DATA CE VCC GND PGM CLK RST OE Pin Name Data I/O Chip enable Power supply voltage Ground Program Clock input Reset input Output enable MN6311S Electrical Characteristics VCC=2.6 to 3.5V, Ta=–10˚C to +60˚C 3 Volt Operation Parameter Power supply voltage "L" level input leakage current "H" level input leakage current Output leakage current "L" level input voltage "H" level input voltage VCC power supply current (during operation) VCC power supply current (during standby) "L" level output voltage "H" level output voltage Symbol VCC ILIL ILIH ILO VIL VIH ICC Test Conditions Read mode Program mode CE pin Other pins PGM, CLK, and RST pins Other pins min 2.6 3.0 –50 –10 — –10 — – 0.1 VCC 0.8 VCC max 3.5 3.5 — 10 –20 10 10 0.2 VCC +0.3 500 2000 20 0.3 — Unit V µA µA µA V V Read mode CLK;f=250kHz Program mode — — — — VCC – 0.3 µA ISB CE = VCC+ 0.3 V; RST and PGM pins at VCC; CLK pin open µA V V VOL VOH IOL=400 µA IOH=10 µA 3 MN6311S Function Descriptions Operating Modes Pin Symbol (Pin No.) Operating Mode EEPROMs CE (2) OE (8) VIL × VIH PGM (5) × × DATA (1) DOUT High-impedance DIN Read Standby Program VIL VIH VIL 4 EEPROMs Package Dimensions (Unit:mm) SOP008–P–0225 MN6311S 1.50±0.20 8 5 6.50±0.30 4.30±0.20 0.60 1 5.00±0.20 4 1.90 DETAIL F 1.10±0.20 1.27 SEATING PLANE 0.40±0.10 0.30 SEATING PLANE SEE DETAIL F 5