MSG36E41

Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 0.12+0.03 -0.02 6 5 4 Unit: mm 0.80±0.05 1.00±0.04 0 to 0.02 • MSG33004 + MSG33001 (0.35) (0.35) 1.00±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Tr2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Overall Total power dissipation * Junction temperature Storage temperature Note) *: Symbol VCBO VCEO VEBO IC VCBO VCEO VEBO IC PT Tj Tstg Rating 9 6 1 100 9 6 1 30 125 125 −55 to +125 Unit V V V mA V V V Display at No.1 lead 0.10 ■ Basic Part Number 1 2 3 0.10 1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2) 0.37+0.03 -0.02 4: Collector (Tr2) 5: Emitter (Tr2) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 6D Internal Connection 6 Tr1 5 4 Tr2 mA mW °C °C 1 2 3 Copper plate at the collector is 5.0 cm2 on substrate at 10 mm × 12 mm × 0.8 mm. ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency * Forward transfer gain * Noise figure * Collector output capacitance (Common base, input open circuited) * Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 15 mA VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz 6.0 100 17 9.0 1.4 0.6 2.0 0.9 Min Typ Max 1 1 1 220 Unit µA µA µA  GHz dB dB pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Observe precautions for handling. Electrostatic sensitive devices. 3. *: Verified by random sampling Publication date: November 2004 SJC00319BED (0.10) 1 MSG36E41 ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C • Tr2 Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency * Forward transfer gain * Noise figure * Collector output capacitance (Common base, input open circuited) * Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 3 mA VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz 9.0 100 19 11.0 1.4 0.3 2.0 0.6 Min Typ Max 1 1 1 220 Unit µA µA µA  GHz dB dB pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Observe precautions for handling. Electrostatic sensitive devices. 3. *: Verified by random sampling Common characteristics chart PC  Ta 120 Collector power dissipation PC (mW) 100 80 60 40 20 0 0 40 80 120 Ambient temperature Ta (°C) 2 SJC00319BED MSG36E41 Characteristics charts of Tr1 IC  VCE 14 IB = 10 µA step 80 µA 70 µA 60 µA 8 50 µA 6 4 2 0 40 µA 30 µA 20 µA 10 µA 0 1 2 3 4 5 6 12 180 VCE = 3 V 160 hFE  IC 25 VCE = 3 V f = 2 GHz fT  I C Forward current transfer ratio hFE Collector current IC (mA) 140 120 100 80 60 40 20 0 10 Transition frequency fT (GHz) 0 0 1 10 100 20 15 10 5 0 1 10 100 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 f = 1 MHz Ta = 25°C 15 GP  IC VCE = 3 V f = 2 GHz 14 12 S21e2  IC VCE = 3 V f = 2 GHz 10 Forward transfer gain S21e (dB) 2 Power gain GP (dB) 10 8 6 5 0 4 2 0 −5 0.1 0 2 4 6 8 10 12 −10 0.1 1 10 100 1 10 100 Collector-base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) NF  IC 7 6 VCE = 3 V f = 2 GHz S11 , S22 1.0 0.5 2.0 VCE = 3 V IC = 30 mA Noise figure NF (dB) 5 4 S11 0 0.3 S22 1.0 3.0 3 ∞ 2 1 − 0.5 0 0.1 1 10 100 −2.0 −1.0 Collector current IC (mA) SJC00319BED 3 MSG36E41 S21e2 , S12e2  f 50 40 Forward transfer gain S21e , 2 Reverse transfer gain S12e (dB) 30 20 10 0 S21e 2 2 −10 −20 −30 −40 −50 0 0.5 1.0 1.5 2.0 2.5 3.0 S12e 2 Frequency f (GHz) 4 SJC00319BED MSG36E41 Characteristics charts of Tr2 IC  VCE 14 12 IB = 10 µA step 180 VCE = 3 V 80 µA 70 µA 10 8 60 µA 50 µA 40 µA 30 µA 4 2 0 20 µA 10 µA 160 hFE  IC 25 VCE = 3 V f = 2 GHz fT  I C Forward current transfer ratio hFE Collector current IC (mA) 140 120 100 80 60 40 20 0 0.01 Transition frequency fT (GHz) 0.1 1 10 100 20 15 6 10 5 0 1 2 3 4 5 6 0 1 10 100 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 0.8 0.7 10 0.6 0.5 0.4 0.3 0.2 0.1 −10 0.1 f = 1 MHz 15 GP  IC VCE = 3 V f = 2 GHz 14 12 S21e2  IC VCE = 3 V f = 2 GHz Forward transfer gain S21e (dB) 2 Power gain GP (dB) 10 8 6 5 0 4 2 0 −5 0 1 2 3 4 5 6 1 10 100 1 10 100 Collector-base voltage VCB (V) Collector current IC (mA) Collector current IC (mA) NF  IC 7 6 VCE = 3 V f = 2 GHz S11 , S22 1.0 0.5 2.0 VCE = 3 V IC = 10 mA Noise figure NF (dB) 5 4 0 3 0.3 S11 1.0 3.0 ∞ 2 S22 1 − 0.5 0 0.1 1 10 100 −2.0 −1.0 Collector current IC (mA) SJC00319BED 5 MSG36E41 S21e2 , S12e2  f 50 40 Forward transfer gain S21e , 2 Reverse transfer gain S12e (dB) 30 20 10 0 S21e 2 2 −10 −20 −30 −40 −50 0 0.5 1.0 1.5 2.0 2.5 3.0 S12e 2 Frequency f (GHz) 6 SJC00319BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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