OH10003

GaAs Hall Devices OH10003 GaAs Hall Device Magnetic sensor I Features • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Sealed in the Mini type (4-pin) package. Allowing automatic insertion through the taping and the magazine package. 2.9 ± 0.2 0.65 ± 0.15 2.8 − 0.3 1.5 + 0.2 − 0.3 + 0.2 Unit : mm 0.65 ± 0.15 0.5 R 0.95 1.9 ± 0.2 4 1 0.95 3 2 1.1 − 0.1 • Various hall motor (VCR, phonograph, VD, CD, and FDD) • Automotive equipment • Industrial equipment • Applicable to wide-varying field (OA equipment, etc.) I Absolute Maximum Ratings Ta = 25°C Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD Topr Tstg Rating 12 150 −30 to +125 −55 to +125 Unit V mW °C °C 1 : VH Output (−) side 2 : VC Input (−) side 3 : VH Output (+) side 4 : VC Input (+) side Mini Type Package (4-pin) Marking Symbol: 3 I Electrical Characteristics Ta = 25°C Parameter Hall voltage*1, 4 Unequilibrium ratio*2, 4 Symbol VH VHO/VH RIN ROUT β α γ Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T/B = 0.1 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.50 0.852 5 −0.06 0.3 2 Min 130 Typ 150 Max 170 ±12 Unit mV % kΩ kΩ %/°C %/°C % Input resistance Output resistance Temperature coefficient of hall voltage Temperature coefficient of input resistance Linearity of hall voltage*3 Note) *1 : *2 : *3 : *4 : VH++VH− VH = 2 Unequilibrium ratio is a percentage of VHO with respect to VH. The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5−KH1 VH γ= (the cumulative sensitivity KH = ) 1/2(KH1+KH5) IC・B VH, VHO/VH rank classification HQ 130 to 158 −5 to +5 3HQ 3HR 3IQ HR 142 to 170 IQ 130 to 158 +2 to +12 3IR IR 142 to 170 KQ KR Class VH (mV) VHO/VH (%) Marking Symbol 130 to 158 142 to 170 −2 to −12 3KQ 3KR 0 to 0.1 0.4 ± 0.2 0.8 I Applications 0.16 − 0.06 + 0.2 + 0.1 0.4 − 0.05 + 0.1 1 OH10003 PD  T a 200 180 GaAs Hall Devices VH  Ta 240 B = 1 kG IC = 6 mA 200 1 600 1 400 RIN  Ta B=0 IC = 1 mA Power dissipation PD (mW) 160 140 120 100 80 60 40 Input resistance RIN (Ω) −40 Hall voltage VH (mV) 1 200 1 000 800 600 400 200 160 120 80 40 20 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (°C) 0 40 80 120 0 −40 0 40 80 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) VH  B 1 600 1 400 VC = 6 V Ta = 25°C 320 280 VH  IC B = 1 kG Ta = 25°C 320 280 VH  VC B = 1 kG Ta = 25°C Hall voltage VH (mV) Hall voltage VH (mV) 1 000 800 600 400 200 0 200 160 120 80 40 0 Hall voltage VH (mV) 0 2 4 6 8 10 12 14 16 1 200 240 240 200 160 120 80 40 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12 14 16 Magnetic flux density B (T) Control current IC (mA) Control voltage VC (V) I Typical Drive Circuit +9 V 4 3 2 1 − + +9 V −9 V −9 V −V +V 2