OH10008

GaAs Hall Devices OH10008 GaAs Hall Device Magnetic sensor • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06%/°C • Mini type (4-pin) package with positioning projection. Allowing automatic insertion through the magazine package. 1.45 ± 0.05 0.9 ± 0.05 Unit : mm 4 1 3 2 0.6 ± 0.1 1.45 ± 0.05 0.8 ± 0.1 2.85 ± 0.25 5 0.2 max. 0.26 ± 0.05 5 0 to 0.15 I Applications • Thin and small hall motors (Applicable to CD, VD, VCR, FDD, and other portable equipment) • Automotive equipment • Measurement equipment • Applicable to wide-varying field (OA equipment, etc.) 0.5 ± 0.1 φ 1.0 ± 0.025 1 : VC Input (+) side 2 : VH Output (−) side 3 : VC Input (−) side 4 : VH Output (+) side Mini Type Package (4-pin) with positioning projection I Absolute Maximum Ratings Ta = 25°C Parameter Control voltage Power dissipation Operating ambient temperature Storage temperature Symbol VC PD Topr Tstg Rating 12 100 −30 to +125 −55 to +125 Unit V mW °C °C Marking Symbol: B I Electrical Characteristics Ta = 25°C Parameter Hall voltage*1 Unequilibrium ratio*2, 4 Symbol VH VHO RIN ROUT β α γ Conditions VC = 6 V, B = 0.1 T VC = 6 V, B = 0 T IC = 1 mA, B = 0 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T IC = 1 mA, B = 0 T IC = 6 mA, B = 0.1 T/0.5 T 0.5 0.75 1.5 5 −0.06 0.3 2 Min 80 Typ 105 Max 130 ±19 Unit mV mV kΩ kΩ %/°C %/°C % Input resistance Output resistance Temperature coefficient of hall voltage Temperature coefficient of input resistance Linearity of hall voltage*3 Note) *1 : VH = VH++VH− 2 *2 : Output pin voltage under no-load (B = 0) condition *3 : The linearity γ of VH is a percentage of a difference between cumulative sensitivity of KH1 and KH5 which are measured respectively at B = 0.1 T and 0.5 T to their average. That is, KH5−KH1 VH γ= (the cumulative sensitivity KH = ) 1/2(KH1+KH5) IC・B *4 : VHO rank classification Class A +19 to +9 B +12 to +2 C +5 to −5 D −2 to −12 E −9 to −19 VHO (mV) 0.6 ± 0.05 0.3 max. I Features 1 OH10008 PD  T a 200 180 240 B = 1 kG IC = 6 mA 200 GaAs Hall Devices VH  Ta 1 600 1 400 RIN  Ta B=0 IC = 1 mA Power dissipation PD (mW) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Input resistance RIN (Ω) −40 Hall voltage VH (mV) 1 200 1 000 800 600 400 200 160 120 80 40 0 0 40 80 120 0 −40 0 40 80 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Ambient temperature Ta (°C) VH  B 1 600 1 400 VC = 6 V Ta = 25°C 320 280 VH  IC B = 1 kG Ta = 25°C 320 280 VH  VC B = 1 kG Ta = 25°C Hall voltage VH (mV) Hall voltage VH (mV) 1 000 800 600 400 200 0 200 160 120 80 40 0 Hall voltage VH (mV) 0 2 4 6 8 10 12 14 16 1 200 240 240 200 160 120 80 40 0 0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 12 14 16 Magnetic flux density B (T) Control current IC (mA) Control voltage VC (V) I Typical Drive Circuit +9 V 1 4 3 2 − + +9 V −9 V −9 V −V +V 2