ON1024

Transmissive Photosensors (Photo lnterrupters) CNZ1021 (ON1021), CNZ1023 (ON1023), CNA1009H (ON1024) Photo lnterrupter For contactless SW, object detection ■ Overview CNZ1021, CNZ1023 and CNA1009H are a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. ■ Features • Highly precise position detection: 0.25 mm • Gap width: 3 mm (CNZ1021, CNZ1023) 5 mm (CNA1009H) • The type directly attached to PCB ....... CNZ1021 Screw-fastened type (one side) ............ CNZ1023 The type directly attached to PCB ....... CNA1009H (with a positioning pins) CNZ1023 Unit: mm CNZ1021 Unit: mm Σ Σ 18.0 12.0 (2.5) 5.0 (2.5) 2.0 12.0 12.0±0.15 5.0 0.4±0.1 (4-R2) Device center 2.1±0.15 (C1.2) 2-R1.5 6.0 3.5 (2-0.45) (2.54) SEC. A-A' 3.0±0.15 A 0.4±0.1 Device center (C1.2) 3.0±0.15 A 10.0 2.1±0.15 10.0 10.0 min. 10.0 min. 2.5 A' φ3.0-0 (2-0.45) (7.6) 2.5 +0.15 A' (2-0.45) (7.6) (2-0.45) (2.54) SEC. A-A' 2 3 1 4 1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-001 Package Unit: mm 2 3 1 4 1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-003 Package CNA1009H Σ 14.0 5.0±0.15 6.0 5.0 0.5±0.1 Device center (C1) (2.5) A 10.0 10.0 min. 2-0.7 2.5 A' 2-φ0.7±0.1 (2-0.45) (2-0.45) (2.54) SEC. A-A' 2 3 (10.0) 5.2±0.1 1 2.35±0.1 4 6.6±0.1 1: Anode 2: Cathode 3: Collector 4: Emitter PISTR104-004 Package (Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference 2.2±0.15 Note) The part numbers in the parenthesis show conventional part number. Publication date: April 2004 SHG00017BED 3.0 -0 0.5 +0.15 1 CNZ1021, CNZ1023, CNA1009H ■ Absolute Maximum Ratings Ta = 25°C Parameter Input (Light Reverse emitting diode) voltage CNZ1021 CNZ1023 CNA1009H Forward current Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation *2 Temperature Operating ambient temperature Storage temperature IF PD VCEO VECO IC PC Topr Tstg Symbol VR Rating 3 3 5 50 75 30 5 20 100 −25 to +85 −40 to +100 mA mW V V mA mW °C °C Unit V Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Input characteristics Reverse current Output Collector-emitter cutoff current characteristics (Base open) Symbol VF IR ICEO IF = 20 mA VR = 3 V VCE = 10 V VCC = 5 V, IF = 20 mA, RL = 100 Ω IF = 40 mA, IC = 1 mA VCC = 5 V, IC = 1 mA RL = 100 Ω 5 5 0.5 10 Conditions Min Typ 1.25 Max 1.40 10 200 15.0 0.4 Unit V µA nA mA V µs µs Collector current IC Transfer characteristics Collector-emitter saturation voltage VCE(sat) Rise time * tr tf Fall time * Note) 1. Input and output are practiced by electricity. 2. This device is designed be disregarded radiation. 3. *: Switching time measurement circuit Sig. in VCC (Input pulse) (Output pulse) tr tf 90% 10% tr : Rise time tf : Fall time 50 Ω Sig. out RL 2 SHG00017BED CNZ1021, CNZ1023, CNA1009H IF , I C  T a 60 60 IF 50 50 IF  V F Ta = 25°C 1.6 VF  T a IF = 50 mA Forward current IF , collector current IC (mA) Forward current IF (mA) Forward voltage VF (V) 1.2 10 mA 1 mA 0.8 40 40 30 IC 20 30 20 0.4 10 10 0 −25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 −40 0 40 80 Ambient temperature Ta (°C ) Forward voltage VF (V) Ambient temperature Ta (°C ) IC  I F 102 VCE = 5 V Ta = 25°C 102 IC  VCE 160 Ta = 25°C IF = 30 mA 20 mA 10 mA ∆IC  Ta VCE = 5 V IF = 20 mA Collector current IC (mA) Collector current IC (mA) 10 10 Relative collector current ∆IC (%) 102 120 1 1 80 10 −1 10 −1 40 10 −2 10 −1 1 10 102 10 −2 10 −1 1 10 0 −40 0 40 80 Forward current IF (mA) Collector-emitter voltage VCE (V) Ambient temperature Ta (°C ) ICEO  Ta Collector-emitter cutoff current (Base open) ICEO (µA) 103 VCE = 10 V 102 tr  I C VCC = 5 V Ta = 25°C 100 ∆ IC  d VCE = 5 V Ta = 25°C IF = 20 mA Criterion 0 d 60 102 10 Relative collector current ∆IC (%) 102 RL = 1 k Ω 500 Ω 100 Ω 80 10 Rise time tr (µs) 1 1 40 10 −1 10 −1 20 10 −2 −40 0 40 80 10 −2 10 −1 1 10 0 0 1 2 3 4 5 6 Ambient temperature Ta (°C ) Collector current IC (mA) Distance d (mm) SHG00017BED 3 Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. 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