ON1110

Transmissive Photosensors (Photo Interrupters) ON1110 Photo Interrupter For contactless SW, object detection Outline ON1110 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected. 1.6 Unit : mm Mark for indicating LED side 2.0 ø1.2 3.0±0.3 2.0±0.2 13.8±0.3 2.8±0.2 A 0.4±0.1 8.8±0.2 0.5 Features Highly precise position detection : 0.3 mm Fast response : tr, tf = 6 µs (typ.) Small output current variation against change in temperature Small package used for saving mounting space Device center A' 3.0 *10.0±0.4 3 2 4 1 0.5 1.8±0.2 8.0 min. 2 0.8 6.0±0.2 4.0 1.6 , ,,, 0.7 *2.54 SEC. A-A' 3 4 Absolute Maximum Ratings (Ta = 25˚C) Parameter Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Symbol Ratings VR IF PD*1 IC 3 50 75 20 30 5 100 Unit V mA mW mA V V mW ˚C ˚C *1 1 Pin connection (Note) * is dimension at the root of leads Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature Operating ambient temperature Storage temperature PC*2 Topr –25 to +85 Tstg –30 to +100 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between terminals Collector cutoff current Output characteristics Collector to emitter capacitance Collector current Symbol VF IR Ct ICEO CC IC*2 V R = 3V VR = 0V, f = 1MHz VCE = 10V VCE = 10V, f = 1MHz VCE = 10V, IF = 20mA 0.3 6 0.3 5 50 200 Conditions IF = 50mA min typ 1.2 max 1.5 10 Unit V µA pF nA pF mA µs V Transfer Response time tr , tf*1 VCC = 10V, IC = 1mA, RL = 100Ω characteristics Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA * Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) *2 IC classifications Class IC (mA) ,, Q ,, 50Ω RL R 0.75 to 2.15 S > 1.85 0.3 to 0.85 1 Transmissive Photosensors (Photo Interrupters) ON1110 IF , IC — Ta 60 60 IF — VF 10 2 Ta = 25˚C IC — IF VCE = 10V Ta = 25˚C IF , IC (mA) 50 IF 50 IF (mA) IC (mA) Collector current 10 Forward current, collector current 40 40 Forward current 30 IC 30 1 20 20 10 –1 10 10 0 – 25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 10 –2 1 10 10 2 10 3 Ambient temperature Ta (˚C ) Forward voltage VF (V) Forward current IF (mA) VF — Ta 1.6 10 2 IC — VCE 160 Ta = 25˚C IC — Ta VCE = 10V IF = 20mA IC (mA) VF (V) 1.2 IF = 50mA 10 IC (%) IF = 30mA 20mA 10mA 120 10mA 0.8 1 Relative output current Forward voltage Collector current 80 0.4 10 –1 40 0 – 40 – 20 0 20 40 60 80 100 10 –2 10 –1 1 10 10 2 – 40 – 20 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C ) ICEO — Ta 10 10 3 tr — IC VCC = 10V Ta = 25˚C 100 IC — d VCE = 10V Ta = 25˚C IF = 20mA 1 IC (%) 80 Criterion 0 d 60 ICEO (µA) 10 2 VCE = 24V 10 –1 10V tr (µs) Dark current Rise time 10 500Ω 100Ω 10 –2 Relative output current RL = 1kΩ 40 1 10 –3 Sig.IN VCC Sig. V1 OUT V2 V2 RL 90% 10% 20 10 –4 – 40 – 20 , ,, 10 –1 10 –2 10 –1 1 V1 50Ω tr td tf 10 0 0 1 2 3 4 5 6 0 20 40 60 80 100 Ambient temperature Ta (˚C ) Collector current IC (mA) Distance d (mm) 2