ON2152

Reflective Photosensors (Photo Reflectors) CNZ2152 (ON2152) Reflective photosensor Non-contact point SW, object sensing CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. 3.2±0.2 Unit: mm Mark for indicating LED side φ1.5 ■ Overview 8.0±0.2 3.5±0.2 1.0 -0.2 +0.1 16.0±0.3 14.0 -0.2 +0.1 φ2.2±0.2 1.0(typ.) ■ Features • Fast response • High sensitivity • High SN ratio 10.0±0.2 φ0.9 -0.2 7.0 min. +0.1 ■ Applications 4-φ0.45 (10.0) (2.54) ■ Absolute Maximum Ratings Ta = 25°C Parameter Input (Light Reverse voltage emitting diode) Forward current Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation *2 Operating ambient temperature Storage temperature Symbol VR IF PD VCEO VECO IC PC T opr Tstg Rating 3 100 150 20 3 30 150 −25 to +85 −30 to + 100 Unit V mA mW V V mA mW °C °C Temperature Note) *1: Input power derating ratio is 2.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 2.0 mW/°C at Ta ≥ 25°C. ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Input Forward voltage characteristics Reverse current Output Collector-emitter cutoff current characteristics (Base open) Symbol Conditions VF IF = 100 mA IR VR = 5 V ICEO VCE = 10 V VCC = 5 V, IF = 20 mA, RL = 100 Ω IF = 100 mA, IC = 1 mA VCC = 10 V, IC = 1 mA, RL = 100 Ω 0.8 Min Typ 1.25 0.05 3.0 500 0.6 8 8 Max 1.50 10 2.00 Unit V µA µA mA µA V µs µs Transfer Collector current *1 IC *2 characteristics IC *3 Collector-emitter saturation voltage VCE(sat) Rise time tr Fall time tf Note) 1. Input and output are handled electrically. 2. This product is not designed to withstand radiation 3. *1: Output current measurement circuit (Ambient light is shut off completely) IF IC VCC ;;; ; RL ;; ;; d = 5 mm *2: White paper (reflective ratio 90%) *3: Tracing paper (paper SM-1 for 2nd original paper) Test Paper Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHG00052BED 6.2±0.2 • Detection of paper, film and cloth • Optical mark reading • Detection of coin and bill • Detection of position and edge • Start, end mark detection of magnetic tape 1: Cathode 2: Anode 3: Emitter 4 1 4: Collector PRSTR104-001 Package (Note) ( ) Dimension is reference 2 3 1 CNZ2152 IF , IC  Ta 120 120 IF IF  V F Ta = 25°C 1.6 VF  Ta Forward current IF , collector current IC (mA) 100 100 IF = 100 mA Forward current IF (mA) 80 80 Forward voltage VF (V) 1.2 50 mA 60 60 0.8 40 IC 20 40 0.4 20 0 −25 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 −40 0 40 80 Ambient temperature Ta (°C) Forward voltage VF (V) Ambient temperature Ta (°C) IC  I F 102 VCC = 5 V RL = 100 Ω Ta = 25°C (1) White paper (Reflective ratio 90%) (2) Tracing paper (Paper SM-1 for 2nd original paper) (1) 1 (2) 10 −1 16 IC  VCE IF = 100 mA 80 mA 160 Ta = 25°C ∆IC  Ta VCC = 5 V IF = 20 mA RL = 100 Ω 120 Collector current IC (mA) 10 Collector current IC (mA) 12 60 mA 50 mA 40 mA 8 Relative collector current ∆IC (%) 30 mA 20 mA 80 4 10 mA 40 10 −2 10 −1 1 10 102 0 0 4 8 12 16 20 24 0 −40 0 40 80 Forward current IF (mA) Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) ICEO  Ta Collector-emitter cutoff current (Base open) ICEO (µA) 103 103 tr  IC VCC = 10 V Ta = 25°C 16 IC  d VCC = 5 V Ta = 25°C IF = 20 mA RL = 100 Ω 102 Collector current IC (mA) 102 12 d 10 Rise time tr (µs) RL = 1 kΩ Mirror 8 10 1 VCE = 25 V 10 V 100 Ω 1 10 −1 Sig. in VCC Sig. V1 out V2 V2 RL 90% 10% 4 White paper (Reflective ratio 90%) V1 50 Ω 10 −2 −40 0 40 80 10 −1 10 −2 10 −1 tr 1 td tf 10 0 0 2 4 6 8 10 12 Ambient temperature Ta (°C) Collector current IC (mA) Distance d (mm) 2 SHG00052BED Caution for Safety ■ This product contains Gallium Arsenide (GaAs). DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal. The product should be excluded form general industrial waste or household garbage. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 2003 SEP